Encapsulated semiconductor component having thinned die with conductive vias

ABSTRACT

A semiconductor component includes a thinned semiconductor die having protective polymer layers on up to six surfaces. The component also includes contact bumps on the die embedded in a circuit side polymer layer, and terminal contacts on the contact bumps in a dense area array. A method for fabricating the component includes the steps of providing a substrate containing multiple dice, forming trenches on the substrate proximate to peripheral edges of the dice, and depositing a polymer material into the trenches. In addition, the method includes the steps of planarizing the back side of the substrate to contact the polymer filled trenches, and cutting through the polymer trenches to singulate the components from the substrate. Prior to the singulating step the components can be tested and burned-in while they remain on the substrate.

FIELD OF THE INVENTION

This invention relates generally to semiconductor manufacture andpackaging. More particularly, this invention relates to encapsulatedsemiconductor components, to methods for fabricating the components, andto systems incorporating the components.

BACKGROUND OF THE INVENTION

In semiconductor manufacture, different types of components have beendeveloped recently, that are smaller and have a higher input/outputcapability than conventional plastic or ceramic packages. For example,one type of semiconductor component is referred to as a chip scalepackage (CSP) because it has an outline, or “footprint”, that is aboutthe same as the outline of the die contained in the package.

Typically, a chip scale package includes a dense area array of solderbumps, such as a standardized grid array as disclosed in U.S. Pat. No.6,169,329 to Farnworth et al. The solder bumps permit the package to beflip chip mounted to a substrate, such as a package substrate, a modulesubstrate or a circuit board. Another type of component, referred to asa bumped die, can also include solder bumps in a dense area array.Bumped dice are sometimes considered as the simplest form of a chipscale package. Another type of component, referred to as a BGA device,is also sometimes considered a chip scale package. Yet another type ofcomponent as disclosed in U.S. Pat. No. 6,150,717 to Wood et al. isreferred to as a direct die contact (DDC) package,

The quality, reliability and cost of these types of components is oftendependent on the fabrication method. Preferably a fabrication method isperformed on a substrate, such as a semiconductor wafer, containingmultiple components, in a manner similar to the wafer level fabricationof semiconductor dice. A wafer level fabrication method permits volumemanufacture with low costs, such that the components are commerciallyviable.

In addition to providing volume manufacture, the fabrication methodpreferably produces components that are as free of defects as possible.In this regard, semiconductor dice include relatively fragilesemiconductor substrates that are susceptible to cracking and chipping.It is preferable for a fabrication method to protect the dice, andprevent damage to the fragile semiconductor substrates of the dice.Similarly, it is preferable for the completed components to havestructures which provide as much protection as possible for the dice.

The present invention is directed to a novel wafer level fabricationmethod for fabricating semiconductor components, such as chip scalepackages, BGA devices and DDC devices, in large volumes, at low costs,and with minimal defects. In addition, the fabrication method producescomponents with increased reliability, and with a chip scale outline,but with the dice protected on six surfaces by polymer layers.

SUMMARY OF THE INVENTION

In accordance with the present invention, encapsulated semiconductorcomponents, methods for fabricating the components, and systemsincorporating the components are provided.

In a first embodiment, the component comprises a semiconductor packagein a chip scale configuration, and containing a single die having acircuit side, a back side and four edges. The die includes asemiconductor substrate thinned from the back side, and integratedcircuits in a required configuration on the circuit side. In addition,the die includes die contacts on the circuit side in electricalcommunication with the integrated circuits.

In addition to the die, the component includes planarized contact bumpson the die contacts, and terminal contacts on the planarized contactbumps. The terminal contacts can comprise conductive bumps or balls, ina dense area array, such as a grid array, or alternately planar padsconfigured as an edge connector. The component also includes a circuitside polymer layer on the circuit side of the die encapsulating theplanarized contact bumps, a back side polymer layer on the thinned backside of the die, and edge polymer layers on the edges of the die.

For fabricating the component, a substrate is provided which contains aplurality of semiconductor dice having the die contacts formed thereon.For example, the substrate can comprise a semiconductor wafer, orportion thereof, which contains dice separated by streets. Initially,conductive bumps are formed on the die contacts using a suitableprocess, such as bonding pre-formed balls, electroless deposition,electrolytic deposition, or stenciling and reflowing of conductivebumps. Trenches are then formed in the substrate between the dice to adepth that is less than a thickness of the substrate. The trenches canbe formed by scribing, etching or lasering the substrate.

The circuit side polymer layer is then formed on the bumps and in thetrenches, and both the circuit side polymer layer and the bumps can beplanarized. The circuit side polymer layer can be formed using a nozzledeposition process, a transfer molding process, an injection moldingprocess, a screen printing process, a stenciling process, a spin resistprocess, a dry film process, a stereo lithographic process, or any othersuitable deposition process. The circuit side polymer layer protects thedice during the fabrication process, and also protects the dice in thecompleted components. Following formation of the circuit side polymerlayer, the substrate is thinned from the back side, such that thepolymer filled trenches are exposed. The thinning step can be performedby mechanically planarizing the substrate or by etching the substrate.

Next, the back side polymer layer is formed on the thinned back side ofthe substrate and can also be planarized. The back side polymer layercan be formed as described above for the circuit side polymer layer. Theback side polymer layer protects the dice during the fabricationprocess, and also protects the dice in the completed components.

Next, the terminal contacts are formed on the contact bumps using asuitable deposition or bonding process. Finally, grooves are formedthrough the polymer filled trenches to singulate the completedcomponents from one another. The grooves have a width that is less thanthe width of the polymer filled trenches, such that the edge polymerlayers which comprise portions of the polymer filled trenches, remain onthe four edges of the dice. The singulated component is encapsulated onsix sides (i.e., circuit side, back side, four edges) by the circuitside polymer layer, the back side polymer layer and by edge polymerlayers on the four edges. Prior to the singulation step, the componentscan be tested and burned-in while they remain on the substrate. Inaddition, the components are electrically isolated on the substrate,which is a particular advantage for burn-in testing.

A second embodiment component includes conductive vias in the thinnedsubstrate, which electrically connect the die contacts to terminalcontacts formed on the back side polymer layer. The terminal contactscan comprise conductive bumps or balls, or alternately planar padsconfigured as an edge connector. In addition, the conductive vias can beused to electrically connect terminal contacts on both sides of thecomponent for stacking multiple components, and for facilitating testingof the components.

A third embodiment component is singulated by etching the substrate. Thecomponent includes a circuit side polymer layer, contact bumps embeddedin the polymer layer, and terminal contacts on the contact bumps. Inaddition, the component includes a thin sealing coat, such as vapordeposited parylene, on five surfaces.

A fourth embodiment component includes a circuit side polymer layer,contact bumps embedded in the polymer layer, and terminal contacts onthe contact bumps. In addition, the component includes a thinnedsemiconductor substrate having a back side coat tape for protecting andlaser marking the substrate. Alternately, a heat sink can be attacheddirectly to the back side of the thinned semiconductor substrate.

A fifth embodiment component includes a circuit side polymer layer,which comprises two separate polymer materials, including an imageablepolymer material (e.g., a photopolymer), and a second polymer materialhaving tailored electrical characteristics. The imageable polymermaterial also covers the edges of the component, and is formed into damshaving a criss-cross pattern configured to retain the tailored polymermaterial. Depending on the material, the imageable polymer material canbe blanket deposited, exposed, and then developed, using a conventionalUV photolithography system, or alternately a laser stereo lithographysystem.

A sixth embodiment pin grid array component includes conductive vias ina thinned die having conductive members in electrical communication withdie contacts. In addition, a semiconductor substrate of the thinned diehas been planarized and etched to expose portions of the conductivemembers which form terminal contact pins for the component.

A seventh embodiment component includes a thinned die having conductivevias formed by laser machining and etching openings in a thinnedsemiconductor substrate. In addition, the thinned substrate can includedoped contacts, having a different conductivity type than the bulk ofthe substrate. The thinned substrate can be etched very thin, such thata very thin component is provided.

An eighth embodiment ball grid array component includes conductive viasin a thinned die having conductive members in electrical communicationwith die contacts. In addition, a semiconductor substrate of the thinneddie has been planarized and etched to expose portions of the conductivemembers which are used to form a pattern of redistribution conductors.Further, balls are bonded to the redistribution conductors to formterminal contacts in a ball grid array.

In each embodiment, the components can be used to construct systems suchas MCM packages, multi chip modules and circuit boards. In addition,prior to assembling the systems, the components can be tested at thewafer level, such that each of the components can be certified as aknown good component (KGC) prior to incorporation into the system.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a schematic cross sectional view taken along section line1A-1A of FIG. 2A illustrating a step in a first embodiment fabricationmethod;

FIG. 1B is a schematic cross sectional view taken along section line1B-1B of FIG. 2B illustrating a step in the first embodiment fabricationmethod;

FIG. 1C is a schematic cross sectional view taken along section line1C-1C of FIG. 2C illustrating a step in the first embodiment fabricationmethod;

FIG. 1D is a schematic cross sectional view taken along section line1D-1D of FIG. 2D illustrating a step in the first embodiment fabricationmethod;

FIG. 1E is a schematic cross sectional view taken along section line1E-1E of FIG. 2E illustrating a step in the first embodiment fabricationmethod;

FIG. 1F is a schematic cross sectional view taken along section line1F-1F of FIG. 2F illustrating a step in the first embodiment fabricationmethod;

FIG. 1G is a schematic cross sectional view taken along section line1G-1G of FIG. 2G illustrating a step in the first embodiment fabricationmethod;

FIG. 1H is a schematic cross sectional view taken along section line1H-1H of FIG. 2H illustrating a step in the first embodiment fabricationmethod;

FIG. 1I is a schematic cross sectional view taken along section line1I-1I of FIG. 2I illustrating a step in the first embodiment fabricationmethod;

FIG. 1J is a schematic cross sectional view taken along section line1J-1J of FIG. 2J illustrating a step in the first embodiment fabricationmethod;

FIG. 1K is a schematic cross sectional view illustrating a step in thefirst embodiment fabrication method;

FIGS. 1L-1N are schematic cross sectional views of an alternateembodiment of the first embodiment fabrication method shown in FIGS.1A-1K;

FIG. 1O is a schematic cross sectional view of an alternate embodimentof the first embodiment fabrication method shown in FIGS. 1A-1K;

FIGS. 1P-1R are schematic cross sectional views of an alternateembodiment of the first embodiment fabrication method shown in FIGS.1A-1K;

FIG. 2A is a cross sectional view taken along section line 2A-2A of FIG.1A illustrating die contacts on a wafer containing a plurality ofsemiconductor dice;

FIG. 2B is a cross sectional view taken along section line 2B-2B of FIG.1B illustrating bumps on the die contacts;

FIG. 2C is a cross sectional view taken along section line 2C-2C of FIG.1C illustrating trenches formed in the streets between the dice on thewafer;

FIG. 2D is a cross sectional view taken along section line 2D-2D of FIG.1D illustrating a good die dam on the wafer;

FIG. 2E is a cross sectional view taken along section line 2E-2E of FIG.1E illustrating a support dam on the wafer;

FIG. 2F is a cross sectional view taken along section lien 2F-2F of FIG.1F illustrating deposition of the circuit side polymer layer on thewafer;

FIG. 2G is a cross sectional view taken along section line 2G-2G of FIG.1G illustrating the circuit side polymer layer and the bumps followingplanarization;

FIG. 2H is a cross sectional view taken along section line 2H-2H of FIG.1H illustrating the polymer filled trenches on the back side of thewafer following back side thinning of the wafer;

FIG. 2I is a cross sectional view taken along section line 2I-2I of FIG.1I illustrating the back side polymer layer on the wafer followingplanarization;

FIG. 2J is a cross sectional view taken along section line 2J-2J of FIG.1J illustrating the terminal contacts on the circuit side polymer layer;

FIG. 2K is a cross sectional view taken along section line 2K-2K of FIG.1K illustrating the singulated first embodiment components and the edgepolymer layers on the components;

FIG. 3A is an enlarged portion of FIG. 2A illustrating a die contact;

FIG. 3B an enlarged portion of FIG. 2B illustrating a metal bump;

FIG. 3C is an enlarged portion of FIG. 2C illustrating the trenches inthe streets of the wafer;

FIG. 3D is an enlarged cross sectional view taken along section line3D-3D of FIG. 2D illustrating a metal bump, a trench and the good diedam;

FIG. 3E is an enlarged cross sectional view taken along section line3E-3E of FIG. 2E illustrating the support dam, the good die dam, atrench and two metal bumps;

FIG. 3F is an enlarged cross sectional view taken along section line3F-3F of FIG. 2F illustrating the circuit side polymer layer in thetrenches and on the bumps;

FIG. 3G is an enlarged cross sectional view taken along section line3G-3G of FIG. 2G illustrating the circuit side polymer layer and thebumps following a planarization step;

FIG. 3H is an enlarged portion of FIG. 2H illustrating the polymerfilled trenches following a back side thinning step;

FIG. 3I is a cross sectional view taken along section line 3I-3I of FIG.2I illustrating the back side polymer layer on the wafer following aplanarization step;

FIG. 3J is a cross sectional view taken along section line 3J-3J of FIG.2J illustrating the terminal contacts on the bumps and the circuit sidepolymer layer;

FIG. 4A is a plan view of a first embodiment semiconductor component;

FIG. 4B is a side elevation view of FIG. 4A;

FIG. 4C is an enlarged cross sectional view of the component taken alongsection line 4C-4C of FIG. 4A;

FIG. 5A is an enlarged cross sectional view equivalent to FIG. 4C of analternate embodiment of the first embodiment component having planarterminal contacts configured as an edge connector;

FIG. 5B is a view taken along line 5B-5B of FIG. 5A illustrating theedge connector;

FIG. 6A is an enlarged cross sectional view equivalent to FIG. 4C of analternate embodiment of the first embodiment component havingencapsulation on five surfaces;

FIG. 6B is an enlarged cross sectional view equivalent to FIG. 4C of analternate embodiment of the first embodiment component having a heatsink;

FIG. 6 is a block diagram illustrating steps in the first embodimentfabrication method;

FIGS. 8A-8F are schematic cross sectional views illustrating steps in asecond embodiment fabrication method;

FIGS. 8G-8I are schematic cross sectional views illustrating steps in analternate embodiment of the second embodiment fabrication method;

FIG. 9A is an enlarged view taken along line 9A-9A of FIG. 8Aillustrating a conductive via;

FIG. 9B is an enlarged cross sectional view taken along section line9B-9B of FIG. 8A illustrating the conductive via;

FIG. 9C is an enlarged cross sectional view equivalent to FIG. 9B butillustrating an alternate embodiment conductive via;

FIG. 9D is an enlarged cross sectional view taken along section line9D-9D of FIG. 8B illustrating a contact bump on the conductive via;

FIG. 9E is an enlarged cross sectional view taken along section line9E-9E of FIG. 8C illustrating the conductive via, the contact bump, anda circuit side polymer layer prior to planarization;

FIG. 9F is an enlarged cross sectional view taken along section line9F-9F of FIG. 8D illustrating the conductive via, the contact bump, andthe circuit side polymer layer following planarization;

FIG. 9G is an enlarged cross sectional view taken along section line9G-9G of FIG. 8E illustrating the conductive via, the contact bump, thecircuit side polymer layer, a back side polymer layer, and a terminalcontact in electrical communication with the conductive via;

FIG. 9H is an enlarged cross sectional view taken along section line9H-9H of FIG. 8H illustrating the conductive via, planarized contactbump and terminal contact formed using the fabrication method of FIGS.8G-8I;

FIG. 10A is an enlarged partial cross sectional view illustrating asecond embodiment component fabricated using the fabrication method ofFIGS. 8A-8F;

FIG. 10B is an enlarged partial cross sectional view illustrating twosecond embodiment components in a stacked assembly;

FIG. 11A is an enlarged partial cross sectional view equivalent to FIG.10A of an alternate embodiment of the second embodiment component havingterminal contacts only on the back side polymer layer;

FIG. 11B is an enlarged partial cross sectional view equivalent to FIG.10A of another alternate embodiment of the second embodiment componenthaving offset terminal contacts;

FIG. 11C is an enlarged partial cross sectional view equivalent to FIG.10A of another alternate embodiment of the second embodiment componenthaving edge connector terminal contacts on the back side polymer layer;

FIG. 11D is an enlarged partial cross sectional view equivalent to FIG.10A of another alternate embodiment of the second embodiment componenthaving edge connector terminal contacts on both the back side polymerlayer and the circuit side polymer layer;

FIG. 11E is an enlarged partial cross sectional view equivalent to FIG.10A of another alternate embodiment of the second embodiment componenthaving terminal contacts on the circuit side polymer layer;

FIG. 11F is an enlarged partial cross sectional view equivalent to FIG.10A of another alternate embodiment of the second embodiment componenthaving terminal contacts on both the circuit side polymer layer and theback side polymer layer;

FIG. 12A is an enlarged partial cross sectional view equivalent to FIG.10A of another alternate embodiment of the second embodiment componentconfigured as an interconnect;

FIG. 12B is an enlarged partial cross sectional view of a stacked systemconstructed using the interconnect component of FIG. 12A;

FIG. 12C is an enlarged partial cross sectional view of a module systemconstructed using an alternate embodiment of the interconnect componentof FIG. 12A;

FIGS. 13A-13F are schematic cross sectional views illustrating steps ina method for fabricating a third embodiment semiconductor componentusing an etching step for singulating the component;

FIG. 13G is an enlarged cross sectional view taken along section line13G-13G of FIG. 13F illustrating a hermetic seal layer on the thirdembodiment component;

FIG. 14A is a cross sectional view taken along section line 14A-14A ofFIG. 13B illustrating an etch mask;

FIG. 14B is a cross sectional view taken along section line 14B-14B ofFIG. 13C illustrating a circuit side polymer layer;

FIGS. 15A-15F are schematic cross sectional views illustrating steps ina method for fabricating a fourth embodiment semiconductor componentencapsulated on a single side;

FIG. 15G is an enlarged view taken along line 15G-15G of FIG. 15Eillustrating a laser marking;

FIG. 16 is a schematic cross sectional view of an alternate embodimentof the fourth embodiment semiconductor component having a heat sink;

FIGS. 17A-17I are schematic cross sectional views illustrating steps ina method for fabricating a fifth embodiment semiconductor component;

FIG. 17J is an enlarged portion of FIG. 17I illustrating the fifthembodiment component; and

FIG. 18A is a schematic cross sectional view of a system in a package(SIP) fabricated using components constructed in accordance with theinvention;

FIG. 18B is a plan view of a multi chip module system fabricated usingcomponents constructed in accordance with the invention;

FIG. 18C is a cross sectional view taken along section line 18C-18C ofFIG. 18B;

FIGS. 19A-19F are schematic cross sectional views illustrating steps ina method for fabricating a sixth embodiment semiconductor component;

FIG. 19G is an enlarged portion of FIG. 19F illustrating the completedsixth embodiment semiconductor component;

FIG. 20A is a cross sectional view taken along section line 20A-20A ofFIG. 19A;

FIG. 20B is a cross sectional view taken along section line 20B-20B ofFIG. 19B;

FIG. 20C is a cross sectional view taken along section line 20C-20C ofFIG. 19C;

FIG. 20D is a cross sectional view taken along section line 20D-20D ofFIG. 19D;

FIG. 20E is a cross sectional view taken along section line 20E-20E ofFIG. 19E;

FIG. 20F is a view taken along line 20F-20F of FIG. 19F;

FIGS. 21A-21E are schematic cross sectional views illustrating steps ina method for fabricating a seventh embodiment semiconductor component;

FIG. 21F is an enlarged portion of FIG. 21E illustrating the completedseventh embodiment semiconductor component;

FIG. 21G is an enlarged schematic cross section equivalent to FIG. 21Fof an alternate embodiment of the seventh embodiment semiconductorcomponent;

FIG. 21H is an enlarged schematic cross section equivalent to FIG. 21Fof an alternate embodiment of the seventh embodiment semiconductorcomponent;

FIG. 21I is an enlarged schematic cross section equivalent to FIG. 21Fof an alternate embodiment of the seventh embodiment semiconductorcomponent;

FIGS. 22A-22E are schematic cross sectional views illustrating steps ina method for fabricating an eighth embodiment semiconductor component;and

FIG. 22F is an enlarged portion of FIG. 22E illustrating the completedeighth embodiment semiconductor component.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

As used herein, the term “semiconductor component” refers to anelectronic element that includes a semiconductor die. Exemplarysemiconductor components include semiconductor packages, semiconductordice, BGA devices, and DDC devices.

Referring to FIGS. 1A-1K, 2A-2K and 3A-3J, steps in the method forfabricating a first embodiment semiconductor component 16 (FIG. 1K) inaccordance with the invention are illustrated. As will be furtherexplained, each completed component 16 (FIG. 1K) contains a single dieencapsulated by polymer layers on six surfaces. The component 16 is thusreferred to as a “6X component”.

Initially, as shown in FIGS. 1A, 2A and 3A, a plurality of semiconductordice 10 are provided, for fabricating a plurality of semiconductorcomponents 16 (FIG. 1K). The dice 10 can comprise conventionalsemiconductor dice having a desired configuration. For example, each die10 can comprise a dynamic random access memory (DRAM), a static randomaccess memory (SRAM), a flash memory, a microprocessor, a digital signalprocessor (DSP) or an application specific integrated circuit (ASIC).The dice 10 and the components 16 can have any polygonal shape. In theillustrative embodiment, the dice 10 and the components 16 arerectangular in shape, but other polygonal shapes, such as square orhexagonal can also be utilized.

As shown in FIG. 2A, the dice 10 can be contained on a semiconductorwafer 12. Although in the illustrative embodiment, the method isperformed on an entire semiconductor wafer 12, it is to be understoodthat the method can be performed on a portion of a wafer, on a panel, oron any other substrate that contains multiple semiconductor dice.

In the illustrative embodiment, the dice 10 are formed on the wafer 12with integrated circuits and semiconductor devices using techniques thatare well known in the art. As also shown in FIG. 2A, the dice 10 areseparated by streets 13 on the wafer 12.

As shown in FIG. 1A, the wafer 12 and each die 10 includes asemiconductor substrate 14 wherein the integrated circuits are formed.In addition, the wafer 12 and each die 10 include a circuit side 20(first side) wherein the integrated circuits are located, and a backside 22 (second side). Although the processes to follow are described asbeing formed on the circuit side 20 or on the back side 22, it is to beunderstood that any operation performed on the circuit side 20 can alsobe formed on the back side 22, and any operation performed on the backside 22 can be performed on the circuit side 20.

Each die 10 also includes a pattern of die contacts 18 formed on thecircuit side 20, in a dense area array, in electrical communication withthe integrated circuits thereon. As shown in FIG. 3A, the die contacts18 are generally circular shaped metal pads having a desired size andspacing. In addition, the die contacts 18 can comprise a solderablemetal such as nickel, copper, gold, silver, platinum, palladium, tin,zinc and alloys of these metals. In the illustrative embodiment, the diecontacts 18 comprise Ni/Au pads having a diameter of about 330 μm.

The die contacts 18 can be formed on the circuit side 20 of the wafer 12using known techniques, such as deposition and patterning of one or moreredistribution layers in electrical communication with the bond pads(not shown) for the dice 10. One such technique is described in U.S.Pat. No. 5,851,911 to Farnworth, which is incorporated herein byreference. Alternately, the die contacts 18 can comprise the bond padsof the dice 10. In addition, the die contacts 18 can be electricallyinsulated from the semiconductor substrate 14 by insulating layers (notshown), formed of suitable materials such as BPSG, SiO₂ or polyimide.

Next, as shown in FIGS. 1B, 2B and 3B, a bump formation step isperformed in which contact bumps 24 are formed on the die contacts 18.The contact bumps 24 can comprise metal bumps deposited on the diecontacts 18 using a suitable deposition process, such as stenciling andreflow of a solder alloy onto the die contacts 18. The contact bumps 24can comprise solder, another metal, or a conductive polymer material. Aswill become more apparent as the description proceeds, the contact bumps24 function as interconnects between the die contacts 18 and terminalcontacts 42 (FIG. 1K) which will be formed on the completed components16. As shown in FIG. 1B, a dicing tape 26 can be attached to the backside 22 of the wafer 12 for performing a scribing step to follow.Suitable dicing tapes 26 are manufactured by Furikawa or Nitto Denko.

Next, as shown in FIGS. 1C, 2C and 3C, a scribing step is performed,during which trenches 28 are formed in the streets 13 of the wafer 12between the dice 10. Although the scribing step is illustrated after thebump formation step, it is to be understood that the scribing step canbe performed prior to the bump formation step. The scribing step can beperformed using a dicing saw having saw blades set to penetrate onlypart way through the wafer 12. The scribing step can also be performedby etching the trenches 28 using a wet etching process, a dry etchingprocess or a plasma etching process. With an etching process, the dicingtape 26 does not need to be employed. However, an etch mask (not shown)can be formed on the circuit side 20 of the wafer 12 having openingsthat define the pattern of the trenches 28. In addition, the depth ofthe trenches 28 can be controlled using suitable end pointingtechniques.

As another alternative, the trenches 28 can be formed in the substrate14 by laser machining the wafer 12 using a laser machining system. Asuitable laser system for laser machining the trenches 28 ismanufactured by Electro Scientific, Inc., of Portland, Oreg. and isdesignated a Model No. 2700.

The trenches 28 can have a criss-cross pattern as shown, similar to atic tac toe board, such that each trench is parallel to some trenchesand perpendicular to other trenches. As such, the trenches 28substantially surround each die 10, defining the four edges 30 of eachdie 10, and the rectangular polygonal peripheral shape of each die 10 aswell.

As shown in FIG. 1C, the trenches 28 do not extend through the fullthickness Tw of the wafer 12 and the semiconductor substrate 14. Rather,the trenches 28 have a depth d measured from the surface of the circuitside 20 of the wafer 12, that is less than the thickness Tw of the wafer12. The depth d can have any value provided it is less than the value ofthe full thickness Tw. By way of example, the depth d can be from about0.1 to 0.9 of the thickness Tw. However, as will be more fullyexplained, the depth d must be greater than a depth Ts (FIG. 3I) of thethinned substrate 14T (FIG. 3I).

In the illustrative embodiment, the wafer 12 has a thickness Tw of about28 mils (725 μm), and the trenches 28 have a depth d of about 10 mils(254 μm). In addition to the depth d, the trenches 28 have a width W,which in the illustrative embodiment is about 4 mils (101.6 μm). Thescribing step can be performed using a dicing saw having saw blades withthe width W, which are configured to penetrate the circuit side 20 ofthe wafer 12 to the depth d. Alternately, with an etching process forforming the trenches 28, openings in an etch mask determine the width W,and control of the etch process end points the trenches 28 with thedepth d.

Next, as shown in FIGS. 1D, 2D and 3D, a good die dam 32 is formed onthe circuit side 20 of the wafer 12. As shown in FIG. 2D, the good diedam 32 encircles only the complete, or “good” dice on the wafer. Theincomplete or “bad” dice are not encircled by the good die dam 32. Asshown in FIG. 3D, the good die dam 32 has a height H measured from thesurface of the circuit side 20 of the wafer 12 that can be greater than,or alternately less than, a height Hb of the contact bumps 24. In theillustrative embodiment, the height Hb of the contact bumps 24 is about13.78 mils (350 μm), and the height H of the good die dam 32 is slightlygreater.

The good die dam 32 can comprise a polymer material deposited on thewafer 12 using a suitable deposition process such as deposition througha nozzle, screen printing, stenciling or stereographic lithography. Inthe illustrative embodiment, the good die dam 32 is deposited on thewafer 12 using a nozzle deposition apparatus. The nozzle depositionapparatus is under computer control, and is configured to move in x andy directions across the wafer 12, and in z directions towards and awayfrom the wafer 12. One suitable nozzle deposition apparatus, also knownas a material dispensing system, is manufactured by Asymtek of Carlsbad,Calif.

The good die dam 32 can comprise a curable polymer material having arelatively high viscosity, such that the polymer material sticks to thewafer 12, and stays in a desired location. Suitable curable polymers forthe good die dam 32 include silicones, polyimides and epoxies. Inaddition, these polymer materials can include fillers such as silicatesconfigured to reduce the coefficient of thermal expansion (CTE) andadjust the viscosity of the polymer material. One suitable curablepolymer is manufactured by Dexter Electronic Materials of Rocky Hill,Conn. under the trademark “HYSOL” FP4451. The good die dam 32 can alsocomprise a polymer such as parylene, deposited using a vapor depositionprocess to be hereinafter described.

Next, as shown in FIGS. 1E, 2E and 3E, a support dam 34 is formed on thewafer 12. In the illustrative embodiment, the support dam 34 comprises aserpentine-shaped ribbon of polymer material formed outside of the gooddie dam 32 proximate to the peripheral edges of the wafer 12. Thesupport dam 34 is configured to support peripheral areas of the wafer 12during the planarization steps to follow. Specifically, these peripheralareas are subject to cracking without the support dam 34. The supportdam 34 can comprise a curable polymer material deposited using asuitable deposition process such as deposition through a nozzle, screenprinting or stenciling.

In the illustrative embodiment, the support dam 34 comprises a samematerial as the good die dam 32, and is deposited using the previouslydescribed nozzle deposition apparatus. Alternately, the support dam 34can comprise one or more pre-formed polymer elements attached to thewafer 12. In this case, the support dam 32 can have a serpentine-shape,a donut shape, or can merely be a segment or ribbon of material, thatsupports a particular area on the wafer 12.

Following deposition, both the good die dam 32 and the support dam 34can be cured to harden the polymer material. For example, curing can beperformed by placing the wafer 12 in an oven at a temperature of about90 to 165° C. for about 30 to 60 minutes.

Next, as shown in FIGS. 1F, 2F and 3F, a circuit side polymer layer 36is deposited on the circuit side 20 of the wafer 12 within the good diedam 32. The circuit side polymer layer 36 can comprise a relatively lowviscosity, curable material configured to spread over a relatively largearea. The circuit side polymer layer 36 can be deposited using asuitable deposition process such as deposition through a nozzle,spatuling, screen printing or stenciling. In the illustrative embodimentthe circuit side polymer layer 36 is deposited in a spiral pattern 46(FIG. 2F) to completely fill the area enclosed by the good die dam 32,using the previously described nozzle deposition apparatus.

As shown in FIG. 3F, the circuit side polymer layer 36 is contained bythe good die dam 32. In addition, the circuit side polymer layer 36encapsulates the contact bumps 24 and covers the surfaces of the dice10. As also shown in FIG. 3F, the circuit side polymer layer 36 fillsthe trenches 28, forming polymer filled trenches 28P between the dice10.

The circuit side polymer layer 36 can comprise a curable polymer such asa silicone, a polyimide or an epoxy. In addition, these materials caninclude fillers, such as silicates, configured to reduce the coefficientof thermal expansion (CTE) and adjust the viscosity of the polymermaterial. One suitable curable polymer material is manufactured byDexter Electronic Materials of Rocky Hill, Conn. under the trademark“HYSOL” FP4450.

Following deposition, the circuit side polymer layer 36 can be cured toharden the polymer material. For example, curing can be performed byplacement of the wafer 12 in an oven at a temperature of about 90 to165° C. for about 30 to 60 minutes.

Next, as shown in FIGS. 1G, 2G and 3G, a circuit side planarization stepis performed, in which the circuit side polymer layer 36 is planarizedto form a planarized circuit side polymer layer 36P. This planarizationstep also planarizes the contact bumps 24 to form planarized contactbumps 24P. In addition, this planarization step planarizes the good diedam 32 to form a planarized good die dam 32P, and planarizes the supportdam 34 to form a planarized support dam 34P.

The circuit side planarization step can be performed using a mechanicalplanarization apparatus (e.g., a grinder). One suitable mechanicalplanarization apparatus is manufactured by Okamoto, and is designated amodel no. VG502. The circuit side planarization step can also beperformed using a chemical mechanical planarization (CMP) apparatus. Asuitable CMP apparatus is commercially available from a manufacturersuch as Westech, SEZ, Plasma Polishing Systems, or TRUSI. The circuitside planarization step can also be performed using an etch backprocess, such as a wet etch process, a dry etch process or a plasmaetching process.

In the illustrative embodiment, the circuit side planarization step canbe performed such that the thickness of the circuit side polymer layer36 is reduced by an amount sufficient to expose and planarize thesurfaces of the contact bumps 24. In the illustrative embodiment, theplanarized circuit side polymer layer 24P has a thickness Tcs of about12 mils (304.8 μm). As another alternative the circuit sideplanarization step need not also planarize the contact bumps 24. Forexample, the contact bumps 24 can remain generally concave in shape, andcan protrude past the surface of the planarized circuit side polymerlayer 36P.

Rather than the above nozzle deposition and planarizing process, thecircuit side polymer layer 36 can be formed by another suitabledeposition process, such as an injection molding process, a transfermolding process, a stenciling process, a screen printing process, a spinresist process, a dry film process, or a stereographic lithographicprocess. As another alternative, the circuit side polymer layer 36 cancomprise a polymer such as parylene, deposited using a vapor depositionprocess to be hereinafter described. As yet another alternative, thecircuit side polymer layer 36 can comprise a wafer level underfillmaterial to be hereinafter described.

Next, as shown in FIGS. 1H, 2H and 3H, a back side thinning step isperformed using the above described mechanical planarization apparatus.The back side thinning step removes semiconductor material from thesemiconductor substrate 14 to form a thinned semiconductor substrate 14Tand thinned dice 10T. In addition, enough of the semiconductor materialis removed to expose the polymer filled trenches 28P. As such, the backside thinning step would singulate the thinned dice 10T, but the polymerfilled trenches 28P hold the thinned dice 10T and the wafer 12 together.Following the back side thinning step, all of the thinned dice 10T areelectrically isolated by the polymer filled trenches 28P.

The amount of semiconductor material removed by the back side thinningstep is dependent on the thickness Tw of the wafer 12, and on the depthd of the trenches 28. For example, if the thickness Tw of the wafer 12is about 28 mils (725 μm), and the depth d of the trenches is about 10mils (25.4 μm), then at least 18 mils (457.2 μm) of semiconductormaterial must be removed to expose the polymer filled trenches 28P. Inthe illustrative embodiment about 22 mils (558.8 μm) of semiconductormaterial is removed, such that the thickness Ts (FIG. 3I) of the thinnedsubstrate 14T is about 6 mils (152.4 μm). However, the thickness Ts ofthe thinned substrate 14T can vary from about 10 μm to 720 μm.

The thickness Ts of the thinned substrate 14T can be related to theoriginal thickness Tw of the wafer 12 by the formula Ts=Tw−y, where yrepresents the amount of material removed by the back side thinningstep.

Optionally, a chemical polishing step (CMP) can be performed to removegrind damage to the thinned semiconductor substrate 14T. Polishing canbe performed using a commercial CMP apparatus from a manufacturer suchas Westech, SEZ, Plasma Polishing Systems or TRUSI. As another option anetching step can be performed using an etchant such as TMAH, to removegrind damage to the thinned semiconductor substrate 14T.

Next, as shown in FIGS. 1I, 2I and 3I, a planarized back side polymerlayer 38P is formed on the thinned back side 22T of the thinned wafer12T. The planarized back side polymer layer 38P can be formed bydepositing a polymer material on the thinned back side 22T, curing thepolymer material, and then mechanically planarizing the cured polymermaterial. All of these steps can be performed substantially aspreviously described for the planarized circuit side polymer layer 36P.

Alternately, the planarized back side polymer layer 38P can be formed byattaching or laminating a polymer film, such as a polyimide or epoxytape, having an adhesive surface and a desired thickness to the thinnedback side 22T. In this case the back side planarizing step can beeliminated. One suitable polymer film is a polymer tape manufactured byLintec, and designated #LE 5950. As another alternative, the back sidepolymer layer 38P can be formed by an injection molding process, atransfer molding process, a spin resist process, a dry film process, astereo lithographic process, or any other suitable process.

As shown in FIG. 3I, a thickness T of the component 16 is equal to athickness Tp of the planarized back side polymer layer 38P, plus thethickness Ts of the thinned substrate 14T. In the illustrativeembodiment the polymer material is initially deposited to a thickness ofabout 12 mils, and the thickness Tp of the planarized back side polymerlayer 38P is about 10.5 mils (266.7 μm). Accordingly, the thickness T ofthe component 16 is about 28.5 mils (723.9 μm).

Following forming of the planarized back side polymer layer 38P, pin oneindicators (not shown) can be laser printed on the back side polymerlayer 38P, and also on the circuit side polymer layer 36P, as required.This printing step can be performed using a conventional laser printingapparatus. Preferably the planarized back side polymer layer 38P isopaque to the wavelength of the laser being employed during the printingstep.

Next, as shown in FIGS. 1J, 2J and 3J, a terminal contact forming stepis performed for forming the terminal contacts 42. This step isperformed by bonding, or depositing, the terminal contacts 42 on theplanarized surface of the planarized contact bumps 24P. As with thecontact bumps 24, the terminal contacts 42 can comprise metal bumpsdeposited on the planarized contact bumps 24P using a suitabledeposition process, such as stenciling and reflow of a solder alloy. Ifdesired, the same stencil mask that was used to form the contact bumps24P can be used to form the terminal contacts 42. Also, rather thanbeing formed of solder, the terminal contacts 42 can comprise anothermetal, or a conductive polymer material.

The terminal contacts 42 (and the contact bumps 24 as well) can also beformed by electrolytic deposition, by electroless deposition, or bybonding pre-fabricated balls to the planarized contact bumps 24P. A ballbumper can also be employed to bond pre-fabricated balls. A suitableball bumper is manufactured by Pac Tech Packaging Technologies ofFalkensee, Germany. The terminal contacts 42 can also be formed using aconventional wire bonder apparatus adapted to form a ball bond, and thento sever the attached wire.

Because the terminal contacts 42 are in effect “stacked” on theplanarized contact bumps 24P, a relatively large spacing distance isprovided for flip chip mounting, and the reliability of the component 16is increased. In addition, the offset, or spacing, provided by theplanarized contact bumps 24P and the terminal contacts 42, may allow thecomponent 16 to be flip chip mounted without requiring an underfill forsome applications.

Optionally, the terminal contacts 42 can be rigidified with a polymersupport layer as described in U.S. Pat. No. 6,180,504 B1 to Farnworth etal., which is incorporated herein by reference. As another option, theterminal contacts 42 can be formed in a standardized grid array asdescribed in U.S. Pat. No. 6,169,329 to Farnworth et al., which isincorporated herein by reference. As yet another option, the terminalcontacts 42 can be formed as described in U.S. Pat. No. 6,281,131 B1 toGilton et al., which is incorporated herein by reference.

In addition, the number, the diameter D (FIG. 4A) and the pitch P (FIG.4B) of the terminal contacts 42 (and of the contact bumps 24 as well)can be selected as required. A representative diameter D can be fromabout 0.005-in (0.127 mm) to about 0.016-in (0.400 mm) or larger. Arepresentative pitch P can be from about 0.004-in (0.100 mm) to about0.039-in (1.0) mm or more.

As shown in FIG. 1J, following formation of the terminal contacts 42,the dicing tape 26 can be applied to the planarized back side polymerlayer 38P.

Next, as shown in FIGS. 1K and 2K, a singulating step is performed tosingulate the components 16 from the wafer 12 and from one another.During the singulating step, grooves 44 are sawn, or otherwise formed,in the polymer filled trenches 28P. The grooves 44 extend through theplanarized circuit side polymer layer 36P, through the polymer filledtrenches 28P, through the planarized back side polymer layer 38P, andinto the dicing tape 26. However, the grooves 44 have a width Wg that isless than the width W of the trenches 28. Accordingly, edge polymerlayers 40 remain on the four edges 30 of the thinned die 10T.Specifically, the edge polymer layers 40 comprise portions of thepolymer material in the polymer filled trenches 28P. Further, the edgepolymer layers 40 provide rigidity for the edges of the component 16,and for the terminal contacts 42 proximate to the edges of the component16.

The singulating step can be performed using a dicing saw having sawblades with the width Wg. Alternately the singulating step can beperformed using another singulation method, such as cutting with a laseror a water jet or be etching the substrate 14T with a suitable wet ordry etchant. By way of example, if the width of the trenches 28 is about4 mils (101.6 μm), and the width Wg of the grooves 44 is about 2 mils(50.8 μm), the edge polymer layers 40 will have a thickness of about 1mil (25.4 μm).

Prior to the singulating step, the components 16 on the wafer 12 can betested and burned-in using a wafer level test process. Suitable waferlevel burn-in test procedures are described in U.S. Pat. No. 6,233,185B1 to Beffa et al., which is incorporated herein by reference. Inaddition, a wafer level burn-in apparatus is described in U.S. Pat. No.6,087,845 to Wood et al., which is incorporated herein by reference.

Because the components 16 on the wafer 12 are electrically isolated bythe polymer filled trenches 28P and the back side planarization step,burn-in testing is improved, as defective components 16 remainelectrically isolated, and do not adversely affect the burn-in testprocedure. In addition, the active circuitry on the thinnedsemiconductor die 10T is protected from damage during test and burn-in.Further, the components 16 have a physical robustness that facilitatestesting and handling of the components 16 by the manufacturer and theend user.

Referring to FIGS. 4A-4C, a singulated component 16 is illustrated. Asshown in FIG. 4C, the component 16 includes the thinned die 10T, thethinned substrate 14T and the die contacts 18 in electricalcommunication with the integrated circuits thereon. The component 16also includes the planarized contact bumps 24P on the die contacts 18.

In addition, the component 16 includes the planarized circuit sidepolymer layer 36P which covers the circuit side 20 of the thinned die14T, and encapsulates the planarized contact bumps 24P. The planarizedcontact bumps 24P are thus supported and rigidified by the planarizedcircuit side polymer layer 36P. In addition, the planarized contactbumps 24P function as interconnects between the die contacts 18 and theterminal contacts 42. Still further, the planarized circuit side polymerlayer 36P has been mechanically planarized to a precise thickness with aplanar surface.

The component 16 also includes the terminal contacts 42 bonded to theplanarized contact bumps 24P. In addition, the terminal contacts 42 arearranged in a dense area array such as a ball grid array (BGA), suchthat a high input/output capability is provided for the component 16.

The component 16 also includes the planarized back side polymer layer38P which covers the thinned back side 22T of the thinned die 10T.Again, the planarized back side polymer layer 38P has been mechanicallyplanarized to a precise thickness with a planar surface.

In addition, the component 16 includes four edge polymer layers 40 whichcover and rigidify the four edges 30 of the thinned die 10T. Thecomponent 16 is thus protected on six sides by polymer layers 36P, 38Pand 40. In the illustrative embodiment the planarized circuit sidepolymer layer 36P and the edge polymer layers 40 are a continuous layerof material, and the planarized back side polymer layer 38P is aseparate layer of material. In addition, the edge polymer layers 40 areformed by portions of the polymer filled trenches 28P (FIG. 3F).

Referring to FIGS. 5A and 5B, an alternate embodiment component 16EC issubstantially similar to the previously described component 16 (FIGS.4A-4C) but includes terminal contacts 42EC configured as an edgeconnector 43 (FIG. 5B). The edge connector 43 (FIG. 5B) can beconfigured as described in U.S. Pat. No. 5,138,434 to Wood et al., whichis incorporated herein by reference.

The terminal contacts 42EC can comprise planar, polygonal pads formed ofa relatively hard metal such as copper or nickel. In addition,conductors 45 on the circuit side 20 establish electrical paths betweenthe terminal contacts 42EC and the die contacts 18. The component 16ECcan be fabricated substantially as shown in FIG. 1A-1K, but with theconductors 45 and the terminal contacts 42EC fabricated in place of thecontact bumps 24. The conductors 45 and the terminal contacts 42EC canbe fabricated by deposition and patterning of one or more metal layers.Alternately electroless plating can provide robustness and lowerelectrical resistance.

Referring to FIG. 6A, an alternate embodiment component 16-5X issubstantially similar to the previously described component 16 (FIG.4A-4C) but is encapsulated on five surfaces rather than on six surfaces.As such, the component 16-5X does not include a polymer layer on thethinned backside 22T of the thinned semiconductor substrate 14T. Thethinned backside 22T is thus exposed, and can be used to mount a heatsink to the thinned semiconductor substrate 14T. The component 16-5X canbe fabricated essentially as shown in FIGS. 1A-1K, but without formingthe planarized back side polymer layer 38P of FIG. 1I.

Referring to FIG. 6B, an alternate embodiment component 16HS issubstantially similar to the previously described component 16-5X (FIG.4F), but includes a heat sink 65 attached to the thinned back side 22Tof the thinned semiconductor substrate 14T. In addition, a thermallyconductive adhesive layer 63, such as a nitride filled epoxy, attachesthe heat sink 65 to the thinned back side 22T. Heat transfer between thethinned semiconductor substrate 14T and the heat sink 65 is facilitatedbecause the thinned back side 22T exposes the semiconductor material.The heat sink 65 can comprise a flat metal plate formed of copper orother metal having a high thermal conductivity. In addition, the heatsink 65 can include ribs or fins (not shown) configured to provide anincreased surface area for heat transfer.

FIG. 7 summarizes the steps illustrated in FIGS. 1A-1K for fabricatingthe first embodiment component 16.

Referring to FIGS. 1L-1N, an alternate embodiment of the firstembodiment fabrication method illustrated in FIGS. 1A-1K is illustrated.In this method the same steps are utilized as previously shown in FIGS.1A-1G and described in the related portions of the specification.However, the thinning step is performed as shown in FIG. 1L, bymechanical planarization in combination with etching to remove damagecaused by the mechanical planarization. This forms a thinned wafer 12T-Ehaving thinned dice 10T-E with thinned substrates 14T-E, substantiallyas previously described. However, in this case the polymer filledtrenches 28P-E extend past the thinned back side 22T-E because they arenot affected by the etching process. Stated differently, the thinnedsemiconductor substrates 14T-E are recessed with respect to the backside edges of the polymer filled trenches 28P-E. The etching process canbe performed using a wet etchant, such as KOH or TMAH, that selectivelyetches the semiconductor substrate 14. Alternately, the etching processcan be performed using a dry etching process or a plasma etchingprocess. As another alternative the polymer filled trenches 28P-E can bepolished back to the level of the thinned back side 22T-E.

Next, as shown in FIG. 1M, planarized back side polymer layers 38P-E areformed on the thinned substrates 14T-E, substantially as previouslydescribed for planarized back side polymer layer 38P. The planarizedback side polymer layers 38P-E fit into the recesses formed by thepolymer filled trenches 28P-E.

Next, as shown in FIG. 1N, the thinned wafer 12T-E is singulatedsubstantially as previously described, by forming grooves 44-E throughthe polymer filled trenches 28P-E. Each singulated component 16-Eincludes a thinned die 10T-E that has been etched back from the backside. In addition, each component 16-E includes the planarized back sidepolymer layer 38P-E, and edge polymer layers 40E which comprise portionsof the polymer filled trenches 28P-E.

Referring to FIG. 10, another alternate embodiment of the firstembodiment fabrication method is illustrated. FIG. 1O corresponds toFIG. 1N which shows the singulating step. All of the previousfabrication steps as shown in FIGS. 1A-1J are the same. However, in thisembodiment the singulating step is performed as shown in FIG. 10, suchthat singulated components 16-BE have beveled edges 51. The bevelededges 51 can be formed using saw blades configured to make beveled cuts.

Referring to FIGS. 1P-1R, an alternate embodiment of the firstembodiment fabrication method illustrated in FIGS. 1A-1K is illustrated.In this method the same steps are utilized as previously shown in FIGS.1A-1G and described in the related portions of the specification.However, in this embodiment both a circuit side polymer layer 36UF, anda back side polymer layer 38UF comprise a polymer film having specificcharacteristics.

Specifically, the polymer film comprises a thermoset polymer film havinga Young's modulus of about 4 G Pascal, and a coefficient of thermalexpansion (CTE) of about 33 parts per million per ° C. In addition, thepolymer film preferably cures and planarizes at a temperature and in atime period that are similar to the temperature and time period for asolder reflow process for bonding solder bumps to semiconductorcomponents (e.g., about 200-250° C. for about several minutes). Further,the polymer film preferably has low alpha emission characteristics.

One suitable thermoset polymer film is a wafer level underfill filmmanufactured by 3M corporation. In addition, this polymer film is selfplanarizing, such that a mechanical planarization step as previouslydescribed is not necessary.

As shown in FIG. 1P, the wafer 12UF has a back side 22UF, and includessemiconductor dice 10UF on a semiconductor substrate 14UF. In addition,contact bumps 24UF have been formed on die contacts 18UF substantiallyas previously described for contact bumps 24 (FIG. 1B) and die contacts18 (FIG. 1A).

As also shown in FIG. 1P, a circuit side polymer layer 36UF is formed bydepositing and curing the above described thermoset polymer film on thecircuit side 20UF of the wafer 12UF. In particular, a piece of thepolymer film having a desired thickness, and about the same peripheralshape as the wafer 12UF, is placed on the circuit side 20UF and on thecontact bumps 24UF. The polymer film is then heated to a temperature ofabout 200-250° C. for several minutes, such that softening and thencuring occurs. Following the curing step, each contact bump 24UF issurrounded by a portion of the circuit side polymer layer 36UF, but witha tip portion of each contact bumps 24UF exposed. As such, the circuitside polymer layer 36UF has a thickness Tuf on the circuit side 20UFthat is less than a height Hcb of the contact bumps 24UF. In theillustrative embodiment the thickness Tuf is about half the height Hcb.However, the thickness Tuf can be from about 0.1 to 0.9 of the heightHcb.

Polymer filled trenches 28UF are also formed during formation of thecircuit side polymer layer 36UF, substantially as previously describedfor polymer filled trenches 28P (FIG. 1F). In this case, during thecuring step the above described polymer film softens and flows into thetrenches 28 (FIG. 1C).

Next, as shown in FIG. 1Q, a thinning step is performed substantially aspreviously described, to form a thinned wafer 12T-UF having thinned dice10T-UF and a thinned substrate 14T-UF with a thinned back side 22T-UF.In addition, a back side polymer layer 38UF is formed on the thinnedback side 22T-UF by depositing and curing the above described polymerfilm. Alternately, the back side polymer layer 38UF can be formed usingthe previously described deposition and planarization steps.

Next, as shown in FIG. 1R, the thinned wafer 12T-UF and the components16UF are singulated, substantially as previously described, by forminggrooves 44UF through the polymer filled trenches 28UF. Each singulatedcomponent 16UF includes a thinned die 10T-UF. In addition, eachsingulated component 16UF includes a portion of the circuit side polymerlayer 36UF, a portion of the back side polymer layer 38UF, and edgepolymer layers 40UF which comprise portions of the polymer filledtrenches 28UF. In addition, each component 16UF includes exposed contactbumps 24UF, which function as the terminal contacts for the component16UF. Further, the contact bumps 24UF are rigidified by the circuit sidepolymer layer 36UF. Alternately, terminal contacts can be bonded to theexposed contact bumps 24UF, as previously described for terminalcontacts 42 (FIG. 1K).

Referring to FIGS. 8A-8F, steps in a method for fabricating a secondembodiment component 16A (FIG. 8F) are illustrated. As with the firstembodiment component 16, each completed component 16A (FIG. 8F) includesa single semiconductor die encapsulated on six surfaces (6X). Inaddition, each die includes conductive vias 68A formed in asemiconducting substrate thereof.

Initially, as shown in FIG. 8A, a plurality of semiconductor dice 10Aare provided on a semiconductor wafer 12A substantially as previouslydescribed. Each die 10A includes a semiconductor substrate 14Acontaining integrated circuits. In addition, the wafer 12A and each die10A includes a circuit side 20A (first side) wherein the integratedcircuits are located, and a back side 22A (second side). Each die 10Aalso includes a pattern of die contacts 18A in the form of bond pads onthe circuit side 20A, in electrical communication with the integratedcircuits thereon. The die contacts 18A are embedded in an insulatinglayer 64A having openings 80A aligned with the die contacts 18A. Theinsulating layer 64A can comprise a glass such as BPSG, an oxide such assilicon dioxide, or a polymer layer such as polyimide. In addition, adielectric layer 71A electrically insulates the die contacts 18A fromthe bulk of the substrate 14A, and from the integrated circuits on thesubstrate 14A. The dielectric layer 71A can comprise an electricallyinsulating material such as silicon dioxide, or polyimide, formed duringfabrication of the wafer 12A. In addition, the dielectric layer 71Arather than being blanket deposited, can be located or can have a shape(e.g., donut shape) that insulates only selected portions of thesubstrate 14A.

As shown in FIG. 8A, conductive vias 68A are formed through the diecontacts 18A, and through the semiconductor substrate 14A, and extendfrom the circuit side 20A to the back side 22A of the dice 10A. As shownin FIGS. 9A and 9B, each conductive via 68A includes a via 74A formed inthe substrate 14A, a conductive member 76A in the via 74A, and aninsulating layer 78A which electrically insulates the conductive member76A from the bulk of the substrate 14A.

One method for forming the vias 74A for the conductive vias 68A combineslaser machining and etching processes. Initially, openings 82A areformed in the die contacts 18A using an etch mask (not shown) and anetching process. Depending on the material of the die contacts 18A, awet etchant can be used to etch the die contacts 18A. For example, fordie contacts 18A made of aluminum, one suitable wet etchant is H₃PO₄.The openings 82A in the die contacts 18A are generally circular, and aresmaller in diameter than the width of the die contacts 18A. The diecontacts 18A thus have metal around their peripheries, but no metal inthe center. In the illustrative embodiment, the openings 82A have adiameter that is about one half the width of the die contacts 18A. Inaddition, the openings 82A surround a portion of the substrate 14A, suchthat the die contacts 18A and the openings 82A form targets, orbullseyes, for a subsequent laser drilling step in which a laser beam isdirected at the openings 82A and through the substrate 14A. The laserbeam initially pierces the substrate 14A on the portions of thesubstrate 14A surrounded by the openings 82A.

The laser drilling step forms lasered openings through the substrate14A, which do not touch the metal of the die contacts 18A, as they arelocated in the middle of the openings 82A in the die contacts 18A. Forexample, the lasered openings can have diameters that are about one halfthe diameter of the openings 82A. The laser beam thus initially contactsand pierces the substrate 14A without having to contact and pierce themetal that forms the die contacts 18A. This helps to prevent shortingbetween the conductive via and the die contacts 18A.

Following the laser drilling step, a cleaning step can be performed inwhich the lasered openings are cleaned using a suitable wet or dryetchant to form the vias 74A for the conductive vias 68A. One suitablewet etchant for cleaning the lasered openings with the substrate 14Acomprising silicon is tetramethylammoniumhydroxide (TMAH). By way ofexample, the diameters of the vias 74A can be from 10 μm to 2 mils orgreater.

A suitable laser system for performing the laser drilling step ismanufactured by Electro Scientific, Inc., of Portland, Oreg. and isdesignated a Model No. 2700. A representative laser fluence for formingthe vias 74A through a silicon substrate having a thickness of about 28mils, is from 2 to 10 watts/per opening at a pulse duration of 20-25 ns,and at a repetition rate of up to several thousand per second. Thewavelength of the laser beam can be a standard UV wavelength (e.g., 355nm).

Still referring to FIGS. 9A and 9B, following the laser drilling andcleaning steps, the insulating layers 78A can be formed on the insidesurfaces of the vias 74A. The insulating layers 78A can be a grown or adeposited material. With the substrate 14A comprising silicon, theinsulating layers 78A can be an oxide, such as SiO₂, formed by a growthprocess by exposure of the substrate 14A to an O₂ atmosphere at anelevated temperature (e.g., 950° C.). In this case the insulating layers78A do not completely close the vias 74A, but form only on the sidewallsof the vias 74A.

Alternately, the insulating layers 78A can comprise an electricallyinsulating material, such as an oxide or a nitride, deposited using adeposition process such as CVD, or a polymer material deposited using asuitable deposition process such as screen printing. In this case, ifthe insulating material completely fills the vias 74A, a subsequentlaser drilling step, substantially as previously described, may berequired to re-open the vias 74A.

Following formation of the insulating layers 78A, the conductive members76A can be formed within the vias 74A. The conductive members 76A can beplugs that completely fill the vias 74A, or alternately, can be layersthat cover just the inside surfaces or sidewalls of the vias 74A. Theconductive members 76A can comprise a highly conductive metal, such asaluminum, titanium, nickel, iridium, copper, gold, tungsten, silver,platinum, palladium, tantalum, molybdenum, tin, zinc and alloys of thesemetals. The above metals can be deposited within the openings 76A usinga deposition process, such as electroless deposition, CVD, orelectrolytic deposition. Alternately a solder metal can be screenprinted in the vias 74A and drawn into the vias 74A with capillaryaction. A solder metal can also be drawn into the vias 74A using avacuum system and a hot solder wave.

Rather than being a metal, the conductive members 76A can comprise aconductive polymer, such as a metal filled silicone, or an isotropicepoxy. Suitable conductive polymers are available from A.I. Technology,Trenton, N.J.; Sheldahl, Northfield, Minn.; and 3M, St. Paul, Minn. Aconductive polymer can be deposited within the vias 74A, as a viscousmaterial, and then cured as required. A suitable deposition process,such as screen printing, or stenciling, can be used to deposit theconductive polymer into the vias 74A.

The conductive vias 68A can also be formed using the laser machiningprocesses disclosed in U.S. Pat. No. 6,107,109 to Akram et al, U.S. Pat.No. 6,114,240 to Akram et al., and U.S. Pat. No. 6,294,837 B1 to Akramet al., all of which are incorporated herein by reference. Rather than alaser machining processes, the conductive vias 68A can be formed byetching the vias 74A using an etch mask and a suitable etchant. Asanother alternative, the conductive vias 68A can be formed as describedin U.S. Pat. No. 6,313,531 B1 to Geusic et al., which is incorporatedherein by reference.

As shown in FIG. 9C, an alternate embodiment counter bored conductivevia 68A-CB can be formed in the substrate 14A. In this case, the abovedescribed laser machining process can be controlled to form the counterbored conductive via 68A-CB from the backside 22A but only part waythrough the substrate 14A. As also shown in FIG. 9C, the substrate 14Acan be a first conductivity type (e.g., P type silicon). In addition,the substrate 14A can include a conductivity region 114A for eachcounterbored via 68A-CB having a second conductivity type (e.g., N typesilicon). The conductivity region 114A can comprise a portion of thesubstrate 14 doped to provide a conductivity type that is opposite tothat of the substrate 14A. For example, the conductivity region 114A cancomprise N type silicon, while the bulk of the substrate 14A cancomprise P type silicon. As such, the conductivity region 114A can bedoped with phosphorus or arsenic or any other suitable dopant, while thebulk of the substrate 14A can be doped with boron or gallium or anyother suitable dopant. This arrangement allows some latitude in locatingthe counterbored via 68A-CB because a reverse bias junction is formed bythe conductivity region 114A, and an additional insulating layer is notrequired in the area of the conductivity region 114A. The terminalcontact 42A (FIG. 8F) can be formed directly on the conductivity region114A such that a tolerance equal to the height of the conductivityregion 114A is provided for locating the counterbored via 68A-CB.

Next, as shown in FIGS. 8B and 9D, contact bumps 24A are formed on thedie contacts 18A in electrical communication with the conductive vias68A. The contact bumps 24A can comprise a solderable metal such asnickel, copper, gold, silver, platinum, palladium or alloys of thesemetals. These metals can be deposited using an electroless orelectrolytic deposition process in a manner similar to deposition of aconventional under bump metalization layer. The contact bumps 24A fillthe openings 80A in the insulating layer 64A, fill the openings 82A inthe die contacts 18A, and physically contact the conductive members 76A.As will be further explained, the contact bumps 24A can be used to stackmultiple components 16A and to provide contact points for testing thecomponents 16A. As also shown in FIG. 8B, trenches 28A are formed partway through the substrate 14A using a scribing, etching or laseringprocess, substantially as previously described.

Next, as shown in FIGS. 8C and 9E, a circuit side polymer layer 36A canbe formed on the circuit side 20A and on the contact bumps 24A. Thecircuit side polymer layer 36A can be formed substantially as previouslydescribed for circuit side polymer layer 36 in FIG. 1F.

Next, as shown in FIGS. 8D and 9F, the circuit side polymer layer 36Aand the contact bumps 24A, can be mechanically planarized (ground) toform a planarized circuit side polymer layer 36AP and planarized contactbumps 24AP. This planarization step can be performed substantially aspreviously described for circuit side polymer layer 36 and planarizedcontact bumps 24P in FIG. 1G. During the planarization step, the metalmaterial of the contact bumps 24A provides a contact surface for endpointing the planarization process.

As also shown in FIGS. 8D and 9F, a backside thinning step is performed,as previously described and shown in FIG. 1H to form a thinned substrate14AT having a thinned back side 22AT.

Next, as shown in FIGS. 8E and 9G, a planarized back side polymer layer38AP is formed on the thinned back side 22AT of the thinned substrate14AT. This step can be formed by depositing a polymer material on thethinned back side 22AT, curing the polymer material, and thenmechanically planarizing the cured polymer material, substantially aspreviously described and shown in FIG. 1I for planarized back sidepolymer layer 38P. Alternately, the planarized back side polymer layer38AP can be formed by attaching or laminating a polymer film, such as apolyimide or epoxy tape, having an adhesive surface and a desiredthickness to the thinned back side 22AT. In addition, the planarizedback side polymer layer 38AP can comprise a polymer film that is opaqueto radiation at a selected wavelength. Such an opaque material willprevent damage to the integrated circuits on the thinned substrate 14ATduring subsequent processing, such as laser marking with a laser beam atthe selected wavelength.

The planarized back side polymer layer 38AP can also comprise aphotoimageable polymer material, such as a thick film resist. One suchresist comprises a negative tone resist, which is blanket deposited to adesired thickness, exposed, developed and then cured. A suitable resistformulation is sold by Shell Chemical under the trademark “EPON RESINSU-8”. Such a resist can be deposited to a thickness of from about0.5-20 mils and then built up using successive layers. A conventionalresist coating apparatus, such as a spin coater, or a meniscus coatercan be used to deposit the resist. The deposited resist can then be“prebaked” at about 95° C. for about 15 minutes and exposed in a desiredpattern using a conventional UV aligner with a dose of about 165 mJ/cm².Developing can be accomplished with a solution of PGMEA(propylenglycol-monomethylether-acetate). This can be followed by a hardbake at about 200° C. for about 30 minutes.

As shown in FIG. 9G, the planarized back side polymer layer 38APincludes conductive vias 70A in electrical communication with theconductive vias 68A. The conductive vias 70A can be formed by formingopenings in the planarized back side polymer layer 38AP, and thenfilling this openings with a conductive material substantially aspreviously described for conductive vias 68A. For example, the openingsfor the conductive vias 70A can be etched using a photopatterned etchmask and a suitable etchant. Alternately, if the planarized back sidepolymer layer 38AP comprises a photoimageable material, the openings forthe conductive vias 70A can be formed by exposure and development of thephotoimageable material. The conductive vias 70A are aligned with, andhave a same longitudinal axis as the conductive vias 68A.

As also shown in FIG. 9G, pads 85A can be formed on the conductive vias70A and the terminal contacts 42A can be bonded to the pads 85A. Thepads 85A can be formed using a suitable deposition process, such aselectroless plating, electrolytic plating, CVD or stenciling. Inaddition the pads can be aligned with the conductive vias 70A using anetch mask, such as a photopatterned resist layer.

As also shown in FIGS. 8E and 9G, terminal contacts 42A are formed onthe pads 85A. The terminal contacts 42A can be formed substantially aspreviously described for terminal contacts 42 in FIG. 1J. For example,the terminal contacts 42A can comprise metal bumps deposited on the pads85A using a suitable deposition process, such as stenciling andreflowing of a solder alloy. As also shown in FIGS. 8E and 9G, a dicingtape 26A can be applied to the planarized circuit side polymer layer36AP.

Next, as shown in FIG. 8F, a singulating step is performed to singulatethe components 16A from the wafer 12A and from one another. Thesingulating step can be performed by forming grooves 44A in the polymerfilled trenches 28AP substantially as previously described and shown inFIG. 1K. However, in this case the singulating step is performed fromthe back side 22AT rather than the circuit side 20A.

As shown in FIG. 10A, a singulated component 16A includes the thinneddie 14AT having the die contacts 18A in electrical communication withthe integrated circuits thereon. The component 16A also includes theplanarized contact bumps 24AP on the die contacts 18A, and theconductive vias 68A and 70A in electrical communication with theplanarized contact bumps 24AP.

In addition, the component 16A includes the planarized circuit sidepolymer layer 36AP, which covers the circuit side 20A of the thinned die14AT, and encapsulates the planarized contact bumps 24AP. The component16A also includes the terminal contacts 42A bonded to the pads 85A inelectrical communication with the conductive vias 68A and 70A. Thecomponent 16A also includes the planarized back side polymer layer 38APwhich covers the thinned back side 22AT of the thinned die 10AT. Inaddition, the component 16A includes four edge polymer layers 40A whichcover the four edges 30A of the thinned die 10AT. The component is thusencapsulated on all six surfaces (6X).

The component 16A can be used to construct systems such as systems in apackage and module systems to be hereinafter described. The component16A can also be used to construct the stacked system 83 shown in FIG.10B. In this case the terminal contacts 42A on a first component 16A-1are bonded to the planarized contact bumps 24AP on a second component16A-2. The stacked system 83 can be mounted to a supporting substratesuch as a circuit board, or the module substrate 58 of FIGS. 18B and18C, using the terminal contacts 42A on the second component 16A-2.

Referring to FIGS. 8G-8H and 9H, an alternate embodiment of thefabrication method illustrated in FIGS. 8A-8F is illustrated. In thisembodiment, the conductive vias 70A (FIG. 8E) are replaced by planarizedback side contact bumps 25AP (FIG. 9H). The method is initiallyidentical to the method shown in FIGS. 8A-8D. However, as shown in FIG.8A, pads 87A are formed directly on the thinned back side 22AT of thethinned substrate 14AT in electrical communication with the conductivevias 68A. The pads 87A can be formed of a solderable metal using asuitable deposition process such as photopatterning and etching adeposited metal layer. Back side contact bumps 25A are then formed onthe pads 87A substantially as previously described for contact bumps 24in FIG. 1E.

Next, as shown in FIG. 8H, the planarized back side polymer layer 38AP,and planarized back side contact bumps 25AP are formed, using amechanical planarization step, (grinding) substantially as previouslydescribed for planarized front side polymer layer 36P and planarizedcontact bumps 24P in FIG. 1H. In addition, terminal contacts 42A arebonded to the planarized back side contact bumps 25AP substantially aspreviously described for terminal contacts 42 in FIG. 1J.

Next, as shown in FIG. 8I, a singulation step is performed substantiallyas previously described and shown in FIG. 8F. The completed component16A′ is identical to the previously described component 16A (FIG. 8F),but includes planarized back side contact bumps 25AP rather thanconductive vias 70A (FIG. 8F). The component 16A′ can also be used toform a stacked system identical to the stacked system 83 of FIG. 10B.

Referring to FIG. 11A, an alternate embodiment component 16A-A isillustrated. The component 16A-A can be constructed substantially aspreviously described for component 16A (FIG. 10A), with conductive vias68A-A, 70A-A, in electrical communication with planarized contact bumps24AP-A and terminal contacts 42A-A. However, a planarized circuit sidepolymer layer 36AP-A covers and insulates the planarized contact bumps24AP-A.

Referring to FIG. 11B, an alternate embodiment component 16A-B isillustrated. The component 16A-B can be constructed substantially aspreviously described for component 16A-A (FIG. 11A), with conductivevias 68A-B, 70A-B, in electrical communication with planarized contactbumps 24AP-B and terminal contacts 42A-B. In addition, a planarizedcircuit side polymer layer 36AP-B covers and insulates the planarizedcontact bumps 24AP-B. However, the terminal contacts 42A-B are offsetwith respect to a longitudinal axis of the conductive vias 68A-B, 70A-B.In addition, conductors 89A-B on the planarized back side polymer layer38AP-B electrically connect the terminal contacts 42A-B to theconductive vias 68A-B, 70A-B. The conductors 89A-B can have a fan outconfiguration, and the pitch of the terminal contacts 42A-B can bedifferent than the pitch of the conductive vias 68A-B, 70A-B and theplanarized contact bumps 24AP-B.

Referring to FIG. 11C, an alternate embodiment component 16A-C isillustrated. The component 16A-C can be constructed substantially aspreviously described for component 16A-B (FIG. 11B), with conductivevias 68A-C, 70A-C, in electrical communication with planarized contactbumps 24AP-C and conductors 89A-C. However, planar terminal contacts42A-C are formed on the planarized back side polymer layer 38AP-C in anedge connector configuration, substantially as previously described forterminal contacts 42EC of FIG. 5A.

Referring to FIG. 11D, an alternate embodiment component 16A-D isillustrated. The component 16A-D can be constructed substantially aspreviously described for component 16A-C (FIG. 11C) with planar terminalcontacts 42A-D formed on the planarized back side polymer layer 38AP-Din an edge connector configuration. In addition, the planarized contactbumps 24AP-D are in electrical communication with planar terminalcontacts 42A-D on the planarized circuit side polymer layer 36AP-D in anedge connector configuration.

Referring to FIG. 11E, an alternate embodiment component 16A-E isillustrated. The component 16A-E can be constructed substantially aspreviously described for component 16A-A (FIG. 11A), with conductivevias 68A-E, 70A-E, in electrical communication with contact bumps 24AP-Eand terminal contacts 42A-E. In addition, a planarized circuit sidepolymer layer 36AP-E covers and insulates the planarized contact bumps24AP-E. However, the terminal contacts 42A-E are offset with respect toa longitudinal axis of the conductive vias 68A-E, 70A-E. In addition,conductors 87E electrically connect the terminal contacts 42A-E to theconductive vias 68A-E, 70A-E. The conductors 87E are electricallyinsulated by the planarized circuit side polymer layer 36AP-E. Theconductors 87E can have a fan out configuration, and the pitch of theterminal contacts 42A-E can be different than the pitch of theconductive vias 68A-E, 70A-E and the planarized contact bumps 24AP-E. Inaddition, the terminal contacts 42A-E are bonded to under bumpmetallization layers 47E on the conductors 89A-E. In this casesingulation can be from the circuit side as this surface is more planarthan the terminal contacts 42A-E.

Referring to FIG. 11F, an alternate embodiment component 16A-F isillustrated. The component 16A-F can be constructed substantially aspreviously described for component 16A-A (FIG. 11A), with conductivevias 68A-F, 70A-F, in electrical communication with planarized contactbumps 24AP-F. In addition, a planarized circuit side polymer layer36AP-F covers and insulates the planarized contact bumps 24AP-F. Thecomponent 16A-F also includes terminal contacts 42A-F on opposing sidesthereof, including terminal contacts 42A-F on the circuit side polymerlayer 36AP-F and terminal contacts 42A-F on the back side polymer layer38AP-F. Conductors 87F on the opposing side of the component 16A-Felectrically connect the terminal contacts 42A-F to the conductive vias68A-F, 70A-F. In addition, the terminal contacts 42A-F are bonded tounder bump metallization layers 47F on the conductors 89A-F. Further anadditional insulating layer 49E electrically insulates the conductors87F on the back side polymer layer 38AP-F.

Referring to FIG. 12A, an alternate embodiment component 16I isillustrated. The component 16I is configured as an interconnect forconstructing systems such as multi chip modules, and does not containactive semiconductor devices. However, the component 16I can includecapacitors, inductors and other electrical devices. The component 16Iincludes a thinned substrate 14IT, which can comprise a semiconductormaterial but without active circuitry. In addition, the component 16Iincludes conductive vias 68I and planarized contact bumps 24IP onopposing side. The thinned substrate 14IT is encapsulated on sixsurfaces by a planarized circuit side polymer layer 36IP, a planarizedback side polymer layer 38IP, and four edge polymer layer 40I. Thecomponent 16I can be constructed substantially as previously describedfor component 16A (FIG. 10A), but with the contact bumps 24IP onopposing sides embedded in the planarized circuit side polymer layer36IP and in the planarized back side polymer layer 38IP.

Referring to FIG. 12B, a stacked system 83I includes the component 16Iand BGA devices 73 flip chip bonded to the planarized contact bumps 24IPon opposing side of the component 16I.

Referring to FIG. 12C, a module system 50I includes a component 16I-ECconstructed as an interconnect substantially as previously described forcomponent 16I. However, the component 16I-EC includes terminal contacts42EC on opposing sides configured as edge connectors, and conductors 87Ielectrically connecting the terminal contacts 42EC to the planarizedcontact bumps 24IP. The module system 50I also includes BGA devices 73flip chip mounted to the planarized contact bumps 24IP.

Referring to FIGS. 13A-13G, steps in a method for fabricating a thirdembodiment component 16E (FIG. 13F) are illustrated. In this embodiment,the components 16E (FIG. 13F) are singulated using an etching process.In addition, each component 16E (FIG. 13F) is hermetically sealed onfive sides, such that a “5X component” is provided.

Initially, as shown in FIG. 13A, a plurality of semiconductor dice 10Eare provided on a semiconductor wafer 12E, substantially as previouslydescribed. Each die 10E includes a semiconductor substrate 14Econtaining integrated circuits. In addition, the wafer 12E and each die10E includes a circuit side 20E (first side) wherein the integratedcircuits are located, and a back side 22E (second side). Each die 10Ealso includes a pattern of die contacts 18E on the circuit side 20E inelectrical communication with the integrated circuits thereon. The diecontacts 18E can be constructed like the previously described diecontacts 18 in FIG. 1A, or like the previously described die contacts18A in FIG. 8A.

Next, as shown in FIG. 13B, a bump formation step is performed in whichcontact bumps 24E are formed on the die contacts 18E. The contact bumps24E can be formed substantially as previously described for contactbumps 24 in FIG. 1H.

As also shown in FIG. 13B, an etch mask 84E is formed on the back side22E of the substrate 14E. The etch mask 84E can comprise a material,such as silicon nitride (Si₃N₄), formed using a suitable depositionprocess, such as CVD. In addition, as shown in FIG. 14A, the etch mask84E includes a criss cross pattern of slots 86E aligned with selectedportions of the back side 22E of the substrate 14E. As will be furtherexplained, the etch mask 84E and the slots 86E will subsequently be usedfor etching the substrate 14E to singulate the dice 10E. The criss crosspattern of the slots 86E substantially matches the criss cross patternof the streets 13 (FIG. 2A) on the circuit side 20E of the wafer 12E.

Next, as shown in FIG. 13C, a circuit side polymer layer 36E is formedon the circuit side 20E. As shown in FIG. 14B, the circuit side polymerlayer 36E includes a criss cross pattern of slots 88E that substantiallymatches the criss cross pattern of the slots 86E in the etch mask 84E onthe back side 22E. As such, the slots 88E substantially align with thestreets 13 (FIG. 2A) of the wafer 12E such that each die 10E issurrounded on four sides by slots 88E.

The circuit side polymer layer 36E can comprise a curable polymermaterial, such as a silicone, a polyimide or an epoxy, as previouslydescribed for the circuit side polymer layer 36 of FIG. 1F. In addition,the circuit side polymer layer 36E can be stenciled onto the circuitside 20E in a pattern that forms the slots 88E, and then cured aspreviously described. Alternately, the circuit side polymer layer 36Ecan comprise a photoimageable material, such as the previously describedthick film resist, blanket deposited on the circuit side 20E, exposed,and then developed with the pattern of slots 88E. As shown in FIG. 13C,the circuit side polymer layer 36E can have a thickness that is greaterthan the height of the contact bumps 24E. Alternately, the circuit sidepolymer layer 36E can have a thickness that is less than the height ofthe contact bumps 24E provided it is thick enough to be subsequentlyplanarized.

Next, as shown in FIG. 13D, a mechanical planarization (grinding) stepcan be performed to form a planarized circuit side polymer layer 36EP,substantially as previously described for planarized circuit sidepolymer layer 36P of FIG. 1G. At the same time, the contact bumps 24Eare planarized to form planarized contact bumps 24EP.

Next, as shown in FIG. 13E, a dicing tape 26E is attached to the wafer12E to cover the planarized circuit side polymer layer 36EP, and theplanarized contact bumps 24EP. One suitable dicing tape is manufacturedby 3M and is designated #NPEITSD0190.

With the dicing tape 26E thereon, the wafer 12E is submerged in a wetetchant, such as a solution of KOH, configured to anisotropically etchthe semiconductor substrate 14E. For performing the etch step, theetchant can be contained in a dip tank which circulates the wet etchantaround a batch of wafers 12E held in a boat. Such an etch process isdescribed in U.S. Pat. No. 5,904,546 to Wood et al., which isincorporated herein by reference.

During the etch step, the wafer 12E is etched from both the back side22E and the circuit side 20E at the same time. In particular, grooves92E are etched in the back side 22E of the wafer 12E in a patterncorresponding to the pattern of the slots 86E in the etch mask 84E. Inaddition, grooves 94E are etched in the front side 20E of the wafer 12Ein a pattern corresponding to the pattern of the slots 88E in theplanarized circuit side polymer layer 36EP. The grooves 92E, 94E in thewafer 12E are sloped at an angle of approximately 54° with thehorizontal, due to the different etch rates of monocrystalline siliconalong the different crystal orientations.

The etch step is performed for a time period sufficient to singulate thedice 10E from the wafer 12E and from one another. In addition, the etchstep can be followed by a second etch step in which a less aggressiveetchant, such as TMAH, is used to smooth and round the etched surfaces.Following the etch step, the etch mask 84E can be stripped using asuitable stripper. For example, if desired, a solution of H₃PO₄ can beused to strip a silicon nitride etch mask 84E.

Also following the etch step, a sealing step is performed. During thesealing step, the dicing tape 26E remains on the circuit side 20E,holding the separated dice 10E and covering the planarized contact bumps24EP. The sealing step can be performed by coating the wafer 12E in witha sealing chemical that coats the exposed surfaces of the dice 10E, andthen hardens to form a sealing layer 90E (FIG. 13G). Because theplanarized contact bumps 24EP, and the planarized circuit side polymerlayer 36EP are protected by the dicing tape 26E, they are not coated bythe sealing chemical.

One suitable chemical for forming the sealing layer 90E comprisesparylene. Parylene polymers can be deposited from the vapor phase by aprocess similar to vacuum metallization at pressures of about 0.1 torr.Suitable polymers include parylene C, parylene N, and parylene D.Parylene is available from Advanced Coating of Tempe, Ariz.

One suitable deposition apparatus for depositing the parylene comprisesa portable parylene deposition system, designated a model PDS 2010LABCOATER 2, manufactured by Specialty Coating Systems, of Indianapolis,Ind.

The parylene uniformly coats all exposed surfaces of the wafer 12E toform the sealing layer 90E. A thickness range for the sealing layer 90Ecan be from 0.10 to 76 μm or greater. Although the edges of thesingulated dice 10E are faceted by the etching step, the sealing layer90E essentially seals the five major surfaces of the dice 10E (back sideand four edges). The completed components 16E are thus hermeticallysealed on five surfaces (5X).

Following the sealing step, the dicing tape 26E is removed, and theterminal contacts 42E are formed on the planarized contact bumps 24EP,substantially as previously described for terminal contacts 42 in FIG.1J.

As shown in FIG. 13F, each component 16E includes a die 10E sealed onfive major surfaces by the sealing layer 90E. In addition, each die 10Eincludes a planarized circuit side polymer layer 36EP, contact bumps24EP embedded in the planarized circuit side polymer layer 36EP, andterminal contacts 42E on the planarized circuit side polymer layer 36EP.

Although the component 16E is illustrated as having terminal contacts42E on only the circuit side 20E, it is to be understood that thecomponent 16E can be fabricated with conductive vias substantially aspreviously described for conductive vias 68A. Accordingly, the component16E can be configured substantially similar to the component 16A of FIG.10A, the component 16A-A of FIG. 11A, the component 16A-B of FIG. 11B,the component 16A-C of FIG. 12A, or the component 16A-D of FIG. 12B. Inaddition, the component 16E rather than having terminal contacts 42E canbe formed with an edge connector 43 substantially as shown in FIG. 5B.

Referring to FIGS. 15A-15F, steps in a method for fabricating a fourthembodiment semiconductor component 16-1X (FIG. 15F) are illustrated. Thesemiconductor component 16-1X (FIG. 15F) contains a single semiconductordie 10-1X encapsulated on only the circuit side thereof, and is thusreferred to as a 1X component.

Initially, as shown in FIG. 15A, a plurality of semiconductor dice 10-1Xare provided on a semiconductor wafer 12-1X substantially as previouslydescribed. Each die 10-1X includes a semiconductor substrate 14-1Xcontaining integrated circuits. In addition, the wafer 12-1X and eachdie 10-1X includes a circuit side 20-1X (first side) wherein theintegrated circuits are located, and a back side 22-1X (second side).Each die 10-1X also includes a pattern of die contacts 18-1X such asredistribution pads or bond pads, on the circuit side 20-1X inelectrical communication with the integrated circuits thereon.

Next, as shown in FIG. 15B, contact bumps 24-1X are formed on the diecontacts 18-1X substantially as previously described and shown in FIG.1B for contact bumps 24.

Next, as shown in FIG. 15C, a planarized support dam 34P-1X, aplanarized good die dam 32P-1X and a planarized circuit side polymerlayer 36P-1X are formed substantially as previously described, and shownin FIGS. 1D, 1E, 1F and 1G. However, there are no recesses (28—FIG. 1C)as the scribing step is not performed.

Next, as shown in FIG. 15D, a thinning step is performed using amechanical planarization process (grinding) substantially as previouslydescribed and shown in FIG. 1H. The thinning step forms thinned dice10-1X, a thinned substrate 14T-1X and a thinned back side 22-1X.

Next, as shown in FIG. 15E, a backside coat tape 1001×is attached to thethinned back side 22-1X. The back side coat tape 100-1X provides asurface for laser marking the thinned back side 22-1X. One suitable backside coat tape 100-1X is blue “LINTEC” tape manufactured by AdvancedCoating of Tempe, Ariz. This tape is about 3-5 mils thick and provides ablue background for the laser markings. The backside coat tape 100-1X isoriginally mounted to a backing tape, which is removed. The backsidecoat tape 100-1X is then cured at a temperature of about 170° C. forabout 4 hours. Additionally, the backside coat tape 100-1X can be opaqueto the wavelength of the radiation being employed for laser marking suchthat the integrated circuits on the thinned substrate 14T-1X areprotected from radiation damage.

As also shown in FIG. 15E, terminal contacts 42-1X are formed on theplanarized contact bumps 24P-1X substantially as described and shown inFIG. 1J for terminal contacts 42. Following forming of the terminalcontacts 42-1X, the thinned dice 10T-1X can be burn-in tested while theyremain on the thinned wafer 12T-1X.

As shown in FIG. 15G, the back side coat tape 100-1X is then marked witha laser mark 102-1X using a suitable laser marking apparatus.

Next, as shown in FIG. 15F, a singulating step is performed by attachinga dicing tape 26-1X to the back side coat tape 100-1X, and sawinggrooves 44-1X through the planarized circuit side polymer layer 36P-1X,the thinned substrate 14T-1X and the back side coat tape 100-1X. Thesingulating step can be performed using a dicing saw, a laser beam or awater jet substantially as previously described and shown in FIG. 1K.

As shown in FIG. 15F, each component 16-1X includes a thinned die 10T-1Xhaving a thinned semiconductor substrate 14T-1X. In addition, eachcomponent 16-1X includes a backside coat tape 100-1X marked with a lasermark 102-1X (FIG. 15G). Each component 16-1X also includes planarizedcontact bumps 24P-1X, a planarized circuit side polymer layer 36P-1Xcovering the circuit side 20-1X, and terminal contacts 42-1X on theplanarized contact bumps 24P-1X.

Because the components 16-1X have been tested and burned-in they can beused without further testing to construct packages in a system, modulesystems and other systems as well.

The components 16-1X can also be fabricated without the back side coattape 100-1X but with a heat sink attached directly to the thinned backside 22T-1X. As shown in FIG. 16, a component 16-1X HS includes a heatsink 65-1X attached directly to the thinned back side 22T-1X of thethinned substrate 14T-1X using a thermally conductive polymer 63-1X.Improved heat transfer is provided because the thermally conductivepolymer 63-1X are in direct contact with the thinned substrate 14T-1X.

Referring to FIGS. 17A-17J, steps in a method for fabricating a fifthembodiment component 16D (FIG. 17J) are illustrated. Initially, as shownin FIG. 17A, a plurality of semiconductor dice 10D are provided on asemiconductor wafer 12D substantially as previously described. Each die10D includes a semiconductor substrate 14D containing integratedcircuits. In addition, the wafer 12D and each die 10D includes a circuitside 20D (first side) wherein the integrated circuits are located, and aback side 22D (second side). Each die 10D also includes a pattern of diecontacts 18D such as redistribution pads or bond pads, on the circuitside 20D in electrical communication with the integrated circuitsthereon.

Next, as shown in FIG. 17B, contact bumps 24D are formed on the diecontacts 18D, substantially as previously described and shown in FIG. 1Bfor the contacts bumps 24. As also shown in FIG. 17B, trenches 28D areformed in the substrate 14D using a scribing process, substantially aspreviously described and shown in FIG. 1C for trenches 28.

Next, as shown in FIG. 17C an imageable polymer material 106D isdeposited on the circuit side 20D, on the contact bumps 24D, and in thetrenches 28D. The imageable polymer material 106D can comprise a thickfilm resist such as the previously described “EPON RESIN SU-8”. In thiscase the polymer material 106D can be patterned using an exposure energy104D such as UV light, and then developed such that it remains on onlyselected portions of the substrate 14D.

Alternately the imageable polymer material 106D can comprise a laserimageable material, such as a Cibatool SL 5530 resin manufactured byCiba Specialty Chemicals Corporation. In this case, the imageablepolymer material 106D can be patterned and developed using a laser beamto provide the exposure energy 104D. A stereo lithography system forperforming the process is available from 3D Systems, Inc. of Valencia,Calif. In addition, a stereographic lithographic process (3-D) isdescribed in U.S. application Ser. No. 09/259,142, to Farnworth et al.filed on Feb. 26, 1999, and in U.S. application Ser. No. 09/652,340, toFarnworth et al. filed on Aug. 31, 2000, both of which are incorporatedherein by reference.

As shown in FIG. 17D, development of the imageable material 106D formspolymer dams 108D on the circuit side 20D and in the trenches 28D. Thepolymer dams 108D are located essentially on the streets 13 (FIG. 2A) ofthe wafer 12D in a criss cross pattern similar to the pattern of thepolymer filled recesses 28P in FIG. 2H.

Next, as shown in FIG. 17E, a polymer material 110D havingcharacteristics tailored for a particular application, is deposited onthe circuit side 20D. For example, the polymer material 110D can beconfigured with certain electrical characteristics such as a desireddielectric constant, volume resistivity or surface resistivity.Similarly, the polymer material 110D can be configured with certainphysical characteristics such as appearance, color, viscosity, fillercontent and curing properties.

The polymer material 110D can comprise a curable polymer such as asilicone, polyimide or epoxy. In addition, these materials can includefillers such as silicates configured to adjust the coefficient ofthermal expansion (CTE) and the viscosity of the polymer material. Onesuitable curable polymer material is manufactured by Dexter ElectronicMaterials of Rocky Hill, Conn. under the trademark “HYSOL” FP4450.

Next, as shown in FIG. 17F, the polymer material 110D and the contactbumps 24 are mechanically planarized to form a planarized circuit sidepolymer material 36DP and planarized contact bumps 24DP. This step canbe performed using a mechanical planarization process (grinding)substantially as previously described and shown in FIG. 1G for layer36P.

Next, as shown in FIG. 17G, the substrate 14D can be thinned to form athinned substrate 14DT. The thinning step can be performed using a backside mechanical planarization step substantially as previously describedand shown in FIG. 1H for thinned substrate 14T.

Next, as shown in FIG. 17H, terminal contacts 42D are formed on theplanarized contact bumps 24DP substantially as previously described andshown in FIG. 1J for terminal contacts 42. In addition, a back sidepolymer layer 38D is formed on the thinned back side 22DT. The back sidepolymer layer 38D can comprise a planarized tape such as the previouslyidentified polymer tape manufactured by Lintec designated #LE 5950. Asanother alternative, the back side polymer layer 38D can be formed by aninjection molding, or a transfer molding process. As yet anotheralternative, the back side polymer layer 38D can comprise a cured andplanarized polymer substantially as previously described for back sidepolymer layer 38P in FIG. 1I.

Next, as shown in FIG. 17I, a singulating step is performed by attachingthe thinned wafer 12DT to a dicing tape 26D and sawing grooves 44Dthrough the polymer dams 108D, substantially as previously described andshown in FIG. 1K for grooves 44. As shown in FIG. 17J, the completedcomponent 16D includes a thinned die 10DT encapsulated on six surfaces.In particular a back side polymer layer 38D encapsulates the thinnedback side 22DT, a planarized circuit side polymer layer 36DPencapsulates the planarized contact bumps 24DP and the circuit side 20D.In addition, portions of the polymer dams 108D encapsulate the edges 30Dof the thinned die 10DT.

Referring to FIGS. 18A-18C, electronic systems constructed usingcomponents fabricated in accordance with the invention are illustrated.In FIGS. 18A-18C a generic component 16G can comprise any one of thepreviously described components 16, 16EC, 16-5X, 16HS, 16A, 16A′, 16A-A,16A-B, 16A-C, 16A-D, 161, 16E, 161-S, 16-1X HS or 16D. In addition, thegeneric component 16G can comprise the stacked system 83 of FIG. 10B.

In FIG. 18A, a system in a package (SIP) 48 is constructed with one ormore components 16G. This type of package is also referred to as a multichip module MCM package. The system in a package (SIP) 48 can beconfigured to perform a desired function such as micro processing. Thesystem in a package (SIP) 48 includes a substrate 52 having terminalleads 54. The components 16G can be flip chip mounted, or alternatelyedge connect mounted, to the substrate 52, with the terminal contacts42G thereon in electrical communication with the terminal leads 54. Thesystem in a package (SIP) 48 also includes a package body 56encapsulating the components 16G and the substrate 52.

Referring to FIGS. 18B and 18C, a multi chip module system 50constructed with one or more components 16G is illustrated. The multichip module system 50 includes a module substrate 58 having an edgeconnector 60, and a plurality of conductors 62 in electricalcommunication with the edge connector 60. The components 16G can be flipchip mounted, or alternately edge connect mounted, to the modulesubstrate 58, with the terminal contacts 42 thereon in electricalcommunication with the conductors 62.

One advantage of the system in a package (SIP) 48, and the multi chipmodule system 50, is that the components 16G have optionally been testedand burned-in at the wafer level. If wafer level burn-in has beenperformed, the components have been certified as known good components(KGC).

Referring to FIGS. 19A-19G and 20A-20F, steps in a method forfabricating a sixth embodiment semiconductor component 16PGA (FIG. 19G)are illustrated. The component 16PGA includes terminal contacts 42PGA(FIG. 19G) which comprise pins in a micro pin grid array (PGA), and isthus referred to as a pin grid array component.

Initially, as shown in FIG. 19A, a plurality of semiconductor dice 10PGAare provided on a semiconductor wafer 12PGA substantially as previouslydescribed. Each die 10PGA includes a semiconductor substrate 14PGAcontaining integrated circuits. In addition, the wafer 12PGA and eachdie 10PGA includes a circuit side 20PGA (first side) wherein theintegrated circuits are located, and a back side 22PGA (second side).

Each die 10PGA also includes a pattern of die contacts 18PGA in the formof bond pads on the circuit side 20PGA, in electrical communication withthe integrated circuits thereon. As shown in FIG. 20A, the die contacts18PGA are embedded in an insulating layer 64PGA having openings 80PGAaligned with the die contacts 18PGA. The insulating layer 64PGA cancomprise a glass such as BPSG, an oxide such as silicon dioxide, or apolymer layer such as polyimide. In addition, a dielectric layer 71PGAelectrically insulates the die contacts 18PGA from the bulk of thesubstrate 14PGA, and from the integrated circuits on the substrate14PGA. The dielectric layer 71PGA can comprise an electricallyinsulating material such as silicon dioxide, or polyimide, formed duringfabrication of the wafer 12PGA. In addition, the dielectric layer 71PGArather than being blanket deposited, can be located or can have a shape(e.g., donut shape) that insulates only selected portions of thesubstrate 14PGA.

As shown in FIG. 20A, conductive vias 68PGA are formed through the diecontacts 18PGA, and through the semiconductor substrate 14PGA, andextend from the circuit side 20PGA to the back side 22PGA of the dice10PGA. As also shown in FIG. 20A, each conductive via 68PGA includes avia 74PGA formed in the substrate 14PGA, a conductive member 76PGA inthe via 74PGA, and an insulating layer 78PGA which electricallyinsulates the conductive member 76PGA from the bulk of the substrate14PGA. The conductive vias 68PGA can be formed substantially aspreviously described for conductive vias 68A of FIG. 9B, by forming anopening 82PGA in the die contacts 18PGA, laser machining the vias 74PGA,forming the insulating layers 78PGA, and then filling the vias 74PGAwith the conductive members 76PGA.

Next, as shown in FIGS. 19B and 20B, planarized contact bumps 24PGA areformed on the die contacts 18PGA in electrical communication with theconductive vias 68PGA. The contact bumps 24PGA can be formedsubstantially as previously described for the contact bumps 24PGA inFIG. 8A. As also shown in FIG. 19B, polymer filled trenches 28PGA areformed part way through the substrate 14PGA using a scribing, etching orlasering process, followed by filling with a polymer substantially aspreviously described for polymer filled trenches 28AP in FIG. 8C. Inaddition, a circuit side polymer layer 36PGA can be formed on thecircuit side 20PGA and on the contact bumps 24PGA. The circuit sidepolymer layer 36PGA can be formed substantially as previously describedfor circuit side polymer layer 36AP in FIG. 9F.

Next, as shown in FIGS. 19C and 20C, a backside thinning step isperformed, as previously described and shown in FIG. 1H to form athinned back side 22T-PGA, a thinned substrate 14T-PGA and thinned dice10T-PGA.

Next, as shown in FIGS. 19D and 20D, an etch back step is performed tofurther thin the thinned substrate 14T-PGA and to expose portions of theconductive members 76PGA. The exposed portions of the conductive members76PGA form conductive pins 77PGA having a pitch that exactly matches thepitch of the die contacts 18PGA. This pitch can be made as small asabout 2 μm using the above described laser machining processes. Inaddition, the conductive pins 77PGA can be arranged in a dense gridarray to form a micro pin grid array (MPGA). The etch back step can beperformed using a wet etching process, a dry etching process or a plasmaetching process such as reactive ion etching. In addition to removingportions of the thinned substrate 14T-PGA and exposing portions of theconductive members 76PGA, the etch back step can also removecorresponding portions of the insulating layers 78PGA of the conductivevias 68PGA.

As also shown in FIGS. 19D and 20D, a back side polymer layer 38PGA isformed on the thinned substrate 14T-PGA. The back side polymer layer38PGA can comprise a layer of parylene, which is vapor depositedsubstantially as previously described for seal layer 90E in FIG. 13G.During vapor deposition of the parylene, the conductive pins 77PGA canbe protected using tape as previously described. Alternately, theconductive pins 77PGA can be coated with parylene which is can besubsequently stripped using a suitable stripper.

Next, as shown in FIGS. 19E and 20E, non-oxidizing layers 79PGA can beformed on the tips of the conductive pins 77PGA. The non-oxidizing layer79PGA can comprise a non-oxidizing metal or metal alloy such as gold, agold/nickel alloy or platinum. In addition, the non-oxidizing layers79PGA can comprise bulbs that just coat the tips of the conductive pins77PGA, or alternately can cover all exposed surfaces thereof (notshown). The non-oxidizing layers 79PGA can be formed using a depositionor plating process, such as electroless deposition, electrolyticdeposition or CVD. The plated pins 77PGA form the terminal contacts42PGA for the components 16PGA.

Next, as shown in FIGS. 19F and 20F, a singulating step is performed tosingulate the components 16PGA from the wafer 12PGA and from oneanother. The singulating step can be performed by forming grooves 44PGAin the polymer filled trenches 28PGA substantially as previouslydescribed and shown in FIG. 1K. As shown in FIG. 19G, a singulatedcomponent 16PGA includes the thinned die 14T-PGA having the die contacts18PGA in electrical communication with the integrated circuits thereon.The component 16PGA also includes the planarized contact bumps 24PGA onthe die contacts 18PGA, and the conductive vias 68PGA in electricalcommunication with the planarized contact bumps 24PGA.

In addition, the component 16PGA includes the circuit side polymer layer36PGA, which covers the circuit side 20PGA of the thinned die 14T-PGA,and encapsulates the planarized contact bumps 24PGA. The component 16PGAalso includes the terminal contacts 42PGA in electrical communicationwith the conductive vias 68PGA, and configured as pins in a micro pingrid array (MPGA). The component 16PGA also includes the back sidepolymer layer 38PGA which covers the thinned back side 22T-PGA of thethinned die 10T-PGA. In addition, the component 16PGA includes four edgepolymer layers 40PGA which cover the four edges 30PGA of the thinned die10T-PGA. The component 16PGA is thus encapsulated on all six surfaces(6X). In addition, the component 16PGA is particularly suited to systemsthat employ pin type sockets.

Referring to FIGS. 21A-21F, steps in a method for fabricating a seventhembodiment semiconductor component 16Z (FIG. 21F) are illustrated.Initially, as shown in FIG. 21F, a plurality of semiconductor dice 10Zare provided on a semiconductor wafer 12Z substantially as previouslydescribed. Each die 10Z includes a semiconductor substrate 14Zcontaining integrated circuits. In addition, the wafer 12Z and each die10Z includes a circuit side 20Z (first side) wherein the integratedcircuits are located, and a back side 22Z (second side). Each die 10Zalso includes a pattern of die contacts 18Z in the form of bond pads onthe circuit side 20Z, in electrical communication with the integratedcircuits thereon. The die contacts 18Z can be electrically insulatedfrom the substrate 14Z by insulating layers, substantially as previouslydescribed for die contacts 18PGA. However, for simplicity theseinsulating layers are not shown.

As also shown in FIG. 21A, planarized contact bumps 24Z have been formedon the die contacts 18Z, and a planarized circuit side polymer layer 36Zhas been formed on the contact bumps 24Z. The contact bumps 24Z and thecircuit side polymer layer 36Z can be formed substantially as previouslydescribed and shown in FIG. 1I, for contact bumps 24P and circuit sidepolymer layer 36P.

As also shown in FIG. 21A, the substrate 14Z includes conductivityregions 114Z subjacent to the die contacts 18Z. The conductivity regions114Z can comprise portions of the substrate 14Z that are doped toprovide a conductivity type that is opposite to that of the substrate14Z. For example, the conductivity regions 114Z can comprise N− typesilicon, while the bulk of the substrate 14Z comprises P+ type silicon.As such, the conductivity regions 114Z can be doped with phosphorus orarsenic, while the bulk of the substrate 14Z can be doped with boron orgallium.

As also shown in FIG. 21A, the dice 10Z and the substrate 14Z have beenthinned using an etch back process, substantially as previouslydescribed for thinned substrate 14T-E of FIG. 1L, using a wet etchprocess, a dry etch process or a plasma etch process. In addition, theetch process can be selective to the substrate 14Z, such that thepolymer filled trenches 36Z remain unaffected.

Next, as shown in FIG. 21B, pockets 112Z are formed in the substrate 14Zfrom the back side 22Z to the conductivity regions 114Z. The pockets 112can be formed using a laser machining process substantially aspreviously described. However, the laser machining process is controlledsuch that the pockets do not completely penetrate the full thickness ofthe substrate 14Z.

Next, as shown in FIG. 21C, vias 74Z are formed in the substrate 14Z byetching the pockets 112 with a suitable etchant such as TMAH.

Next, as shown in FIG. 21D, conductive vias 68Z are formed in the vias74Z substantially as previously described, by forming insulating layers78Z in the vias 74Z, and then forming the conductive members 76Z in thevias 74Z. However, in this case the conductive vias 68Z include contactpads 42Z, which form the terminal contacts for the components 16Z. Asalso shown in FIG. 21D, the polymer filled trenches 28Z can beplanarized to the back side 22Z of the wafer 12Z using a suitableprocess such as grinding. In addition, a back side polymer layer 38Zsuch as vapor deposited parylene can be formed on the back side 22Z,substantially as previously described.

Next, as shown in FIG. 21E, a singulating step is performed to singulatethe components 16Z from the wafer 12Z and from one another. Thesingulating step can be performed by forming grooves 44Z in the polymerfilled trenches 28Z substantially as previously described and shown inFIG. 1K.

As shown in FIG. 21F, a singulated component 16Z includes the thinneddie 14Z having the die contacts 18Z in electrical communication with theintegrated circuits thereon. The component 16Z also includes theplanarized contact bumps 24Z on the die contacts 18Z, and the conductivevias 68Z in electrical communication with the planarized contact bumps24Z.

In addition, the component 16Z includes the circuit side polymer layer36Z, which covers the circuit side 20Z of the thinned die 14Z, andencapsulates the planarized contact bumps 24Z. The component 16Z alsoincludes the terminal contacts 42Z in electrical communication with theconductive vias 68Z, and the back side polymer layer 38Z which coversthe thinned back side 22Z of the thinned die 10Z. In addition, thecomponent 16Z includes four edge polymer layers 40Z which cover the fouredges 30Z of the thinned die 10Z. The component 16Z is thus encapsulatedon all six surfaces (6X).

Referring to FIG. 21G, an alternate embodiment component 16Z-VT isconstructed substantially as previously described for component 16Z(FIG. 21F). However, the substrate 14Z-VT is etched very thin, on theorder of several μm or less to 250 μm (e.g., 3 μm to 250 μm), and theback side polymer layer can be made or etched very thin, such that avery thin component is provided.

Referring to FIG. 21H, an alternate embodiment component 16Z-VT1 isconstructed substantially as previously described for component 16Z-VT(FIG. 21G). However, edge polymer layers 40Z-VT1 extend past thesubstrate 14Z-VT1, such that the substrate 14Z-VT1 is recessed.

Referring to FIG. 21I, an alternate embodiment component 16Z-VT2 isconstructed substantially as previously described for component 16Z-VT(FIG. 21G). However, edge polymer layers 40Z-VT2 are recessed withrespect to the substrate 14Z-VT2, such that edges of the substrate14Z-VT2 are exposed.

Referring to FIGS. 22A-22F, steps in a method for fabricating an eighthembodiment semiconductor component 16BGA (FIG. 22E) are illustrated. Thecomponent 16BGA includes terminal contacts 42BGA (FIG. 22E) whichcomprise balls in a ball grid array (BGA), and is thus referred to as aball grid array component.

Initially, as shown in FIG. 22A, planarized contact bumps 24BGA havebeen formed on die contacts 18BGA, and a planarized circuit side polymerlayer 36BGA has been formed on the contact bumps 24BGA. The contactbumps 24BGA and the circuit side polymer layer 36BGA can be formedsubstantially as previously described and shown in FIG. 1I, for contactbumps 24P and circuit side polymer layer 36P. In addition, conductivevias 68BGA are formed substantially as previously described forconductive vias 68A in FIG. 8A.

As also shown in FIG. 22A, polymer filled trenches 28BGA are formed partway through the substrate 14BGA using a scribing, etching or laseringprocess, followed by filling with a polymer substantially as previouslydescribed for polymer filled trenches 28AP in FIG. 8C. As also shown inFIG. 22A, a backside thinning step is performed, as previously describedand shown in FIG. 1H, to form a thinned back side 22T-BGA, a thinnedsubstrate 14T-BGA and thinned dice 10T-BGA.

Next, as shown in FIG. 22B, an etch back step is performed to furtherthin the thinned substrate 14T-BGA and to expose tip portions of theconductive members 76BGA. This etching step can be performed to removeonly a small amount of the thinned substrate 14TBGA.

Next, as shown in FIG. 22C, a pattern of conductors 89BGA is formed onthe thinned backside 22T-BGA using the tip portions of the conductivemembers 76BGA as a starting point. However the conductors 89BGA can bein a fan out configuration and have a desired pattern such as a ballgrid array (BGA) or fine ball grid array (FBGA). The conductors 89BGAcan be formed by depositing and etching a redistribution layer or bydirect deposition such as a plating, an electrolytic or an electrolessprocess.

In addition, a back side insulating layer 38BGA can be formedsubstantially as previously described for any of the previousembodiment. For example, the insulating layer 38BGA can comprise a verythin layer of parylene deposited using the previously described vapordeposition method.

Next, as shown in FIG. 22D, terminal contacts 42BGA are formed inelectrical communication with the conductors 89BGA. The terminalcontacts 42BGA can comprise conductive bumps or balls, such as metalballs formed using a suitable bonding or deposition process.

Next, as shown in FIG. 22E, a singulating step can be performed to formgrooves 28BGA and singulated the components 16BGA, substantially aspreviously described. As shown in FIG. 22F, a singulated component 16BGAincludes the thinned die 14T-BGA having the die contacts 18BGA inelectrical communication with the integrated circuits thereon. Thecomponent 16BGA also includes the planarized contact bumps 24BGA on thedie contacts 18BGA, and the conductive vias 68BGA in electricalcommunication with the planarized contact bumps 24BGA.

In addition, the component 16BGA includes the circuit side polymer layer36BGA, which covers the circuit side 20BGA of the thinned die 14T-BGA,and encapsulates the planarized contact bumps 24BGA. The component 16BGAalso includes the terminal contacts 42BGA in electrical communicationwith the conductive vias 68BGA, and configured as a ball grid array(BGA) or a micro pin grid array (MPBGA). The component 16BGA alsoincludes the back side polymer layer 38BGA which covers the thinned backside 22T-BGA of the thinned die 10T-BGA. In addition, the component16BGA includes four edge polymer layers 40BGA which cover the four edges30BGA of the thinned die 10T-BGA. The component 16BGA is thusencapsulated on all six surfaces (6X).

Thus the invention provides improved encapsulated semiconductorcomponents, methods for fabricating the component, and systemsincorporating the component. While the invention has been described withreference to certain preferred embodiments, as will be apparent to thoseskilled in the art, certain changes and modifications can be madewithout departing from the scope of the invention as defined by thefollowing claims.

1-195. (canceled)
 196. A semiconductor component comprising: a thinnedsemiconductor die having a circuit side, a back side, four peripheraledges, and a plurality of die contacts on the circuit side; a firstpolymer layer covering the circuit side and the peripheral edges; aplurality of conductive vias in the die in electrical communication withthe die contacts; a second polymer layer covering the back side; and aplurality of terminal contacts in electrical communication with theconductive vias and the die contacts.
 197. The semiconductor componentof claim 196 wherein the terminal contacts are on the circuit side. 198.The semiconductor component of claim 196 wherein the terminal contactsare on the back side.
 199. The semiconductor component of claim 196wherein the terminal contacts are on both the circuit side and the backside.
 200. The semiconductor component of claim 196 wherein the terminalcontacts are offset from the conductive vias.
 201. The semiconductorcomponent of claim 196 wherein each conductive via comprise a reversebias junction.
 202. The semiconductor component of claim 196 wherein theterminal contacts are configured as an edge connector.
 203. Thesemiconductor component of claim 196 wherein the terminal contacts arebonded to contact bumps on the die contacts.
 204. The semiconductorcomponent of claim 196 wherein the terminal contacts are bonded toplanarized contact bumps on the die contacts planarized to a surface ofthe first polymer layer.
 205. The semiconductor component of claim 196wherein the conductive vias comprise openings in the die, insulatinglayers on the openings, and a conductive material in the openings. 206.The semiconductor component of claim 196 wherein the conductive viascomprise portions of the die implanted with a dopant.
 207. Thesemiconductor component of claim 196 wherein the terminal contactscomprise portions of the conductive vias configured as pin contacts.208. The semiconductor component of claim 196 wherein the terminalcontacts comprise balls or bumps in an area array. 209-232. (canceled)233. A semiconductor component comprising: a thinned semiconductor diehaving a circuit side, a back side, and a plurality of die contacts onthe circuit side; a plurality of conductive vias in the die inelectrical communication with the die contacts; and a plurality ofterminal contacts in electrical communication with the conductive viasand the die contacts comprising pin contacts.
 234. The semiconductorcomponent of claim 233 wherein the pin contacts comprise conductiveportions of the conductive vias.
 235. The semiconductor component ofclaim 233 wherein the pin contacts comprise a pin grid array.
 236. Thesemiconductor component of claim 233 wherein each conductive viacomprises a reverse junction bias.
 237. The semiconductor component ofclaim 233 further comprising a second polymer layer covering the backside.
 238. The semiconductor component of claim 233 wherein the thinneddie has a thickness of from about 10 μm to 250 μm.
 239. Thesemiconductor component of claim 233 further comprising a first polymerlayer covering at least the circuit side.
 240. The semiconductorcomponent of claim 239 wherein the first polymer layer covers edges ofthe die.
 241. The semiconductor component of claim 239 furthercomprising a second polymer layer covering the back side.
 242. Asemiconductor component comprising: a thinned semiconductor die having acircuit side, a back side, and a plurality of die contacts on thecircuit side; a plurality of conductive vias in the die in electricalcommunication with the die contacts; and a plurality of terminalcontacts in electrical communication with the conductive vias and thedie contacts comprising tip portions projecting from the thinnedsemiconductor die; a plurality of conductors in electrical communicationwith the tip portions; and a plurality of terminal contacts inelectrical communication with the conductors.
 243. The semiconductorcomponent of claim 242 wherein the tip portions comprise a conductivematerial.
 244. The semiconductor component of claim 242 wherein theterminal contacts comprise ball or bumps in a grid array.
 245. Thesemiconductor component of claim 242 wherein the conductive viascomprise reverse bias junctions.
 246. The semiconductor component ofclaim 242 further comprising a first polymer layer covering at least thecircuit side.
 247. The semiconductor component of claim 246 wherein thefirst polymer layer covers edges of the die.
 248. The semiconductorcomponent of claim 246 further comprising a second polymer layercovering the back side. 249-258. (canceled)
 259. A stacked semiconductorsystem comprising: a first semiconductor component comprising: a thinnedsemiconductor die having a circuit side, a back side, four peripheraledges, and an array of die contacts on the circuit side; a plurality ofcontact bumps on the die contacts; a first polymer layer covering thecircuit side, the peripheral edges, and portions of the contact bumps; aplurality of conductive vias in the die in electrical communication withthe contact bumps; a second polymer layer covering the back side; and aplurality of terminal contacts on the back side in electricalcommunication with the conductive vias; and a second semiconductorcomponent substantially identical to the first semiconductor componentcomprising a plurality of second terminal contacts bonded to the contactbumps.
 260. The stacked semiconductor system of claim 259 wherein theconductive vias comprise openings in the die, insulating layers on theopenings, and a conductive material in the openings.
 261. The stackedsemiconductor system of claim 259 wherein the terminal contacts compriseballs or bumps in a grid array.